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AUIRLR3110ZTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 63A DPAK. Review the specifications below when checking this part for your BOM.
The AUIRLR3110ZTRL is an automotive-grade N-channel HEXFET power MOSFET in a D-Pak (TO-252) tape and reel package. It features a 100V drain-source voltage rating and ultra-low on-resistance of 14mΩ maximum at VGS=10V. The device supports continuous drain currents up to 63A (silicon limited) or 42A (package limited). Key electrical parameters include a gate threshold voltage range of 1.0V to 2.5V, total gate charge of 34n typical, and a junction temperature operating range from -55°C to +175°C.
Verify the specific ordering suffix 'TRL' corresponds to the Tape and Reel left configuration with a quantity of 3000 units as documented in the manufacturer's ordering table. Confirm that the base part number matches the automotive qualification requirements for your specific application environment before finalizing procurement.
Select this component when high current handling and low conduction losses are required in automotive environments. The logic-level gate drive simplifies driver circuit design, while the robust thermal performance and avalanche rating ensure durability under transient conditions. Ensure the PCB layout accommodates the D-Pak package dimensions for optimal heat dissipation.
This part belongs to Infineon's HEXFET family of power MOSFETs, specifically designed for automotive applications. It utilizes advanced trench process technology to achieve superior on-resistance per silicon area compared to standard planar devices. The AUI prefix denotes its automotive grade qualification status.
Direct replacements must match the 100V rating, D-Pak package, and automotive qualification. Verify that any substitute offers comparable RDS(on), gate charge, and avalanche energy ratings to maintain system performance and reliability without redesigning the thermal or gate drive circuits.
Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature, with specific energy ratings provided for single pulse and repetitive conditions.
The silicon-limited current (63A) represents the theoretical maximum based on the die's thermal capacity, while the package-limited current (42A) accounts for the physical constraints of the D-Pak package leads and bond wires.
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