AUIRLR3705Z

Single FETs, MOSFETs Overview

The AUIRLR3705Z is an N-channel enhancement mode MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a maximum drain-source voltage of 55 V and a continuous drain current of 89 A. The device utilizes a DPAK (TO-252) surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 12 mΩ, a gate threshold voltage range of 1 V to 3 V, and a typical gate charge of 44 nC at 5 V. It supports a maximum power dissipation of 130 W and operates within a temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Logic-level gate drive capability supporting 5 V operation
• Advanced processing technology for low on-resistance per silicon area
• Fast switching characteristics suitable for high-frequency applications

Single FETs, MOSFETs Applications

• Power conversion systems
• Motor drive circuits
• Battery management systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for obsolescence notices, as specific variants may have discontinued lifecycle statuses. Ensure packaging specifications match application requirements for surface mount assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust N-channel switching with logic-level compatibility. Evaluate thermal management needs given the 130 W dissipation rating in the DPAK package. Compare on-resistance values against circuit load requirements to ensure efficiency targets are met under expected operating temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, known for utilizing advanced silicon processing techniques. The series emphasizes low on-resistance and fast switching speeds. The AUIRLR3705Z specifically integrates automotive-grade isolation considerations implied by the 'AU' prefix, targeting reliable performance in demanding electronic environments.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for verified substitutes. Generic equivalents may differ in avalanche energy ratings or gate charge characteristics. Verify pinout compatibility and thermal resistance values before integrating alternative components into existing board layouts.