RF Diode BAP65-05,215 product image

BAP65-05,215

$0.09
  • Description:RF DIODE PIN 30V 250MW SOT-23
  • Series:-

SKU:ab2cd736c1ab Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BAP65-05,215 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP Semiconductors. Its product description is RF DIODE PIN 30V 250MW SOT-23. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP65-05,215

  • Description:RF DIODE PIN 30V 250MW SOT-23
  • Series:-
  • Mfr:NXP Semiconductors
  • Package:Bulk
  • Diode Type:PIN - 1 Pair Common Cathode
  • Voltage - Peak Reverse (Max):30V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.425pF @ 20V, 1MHz
  • Resistance @ If, F:350mOhm @ 100mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP65-05,215

BAP65-05,215

RF Diode Overview

The BAP65-05,215 is a silicon PIN diode featuring two planar elements in an SOT23 surface-mount package. It operates with a common cathode configuration and supports a continuous reverse voltage of 30 V and a forward current of 100 mA. The device exhibits low capacitance, ranging from 0.425 pF to 0.7 pF at 1 MHz, and low forward resistance, typically 0.35 Ω at 100 mA. It includes AEC-Q101 automotive qualification and maintains a junction temperature range up to 150 °C.

RF Diode Feature Summary

  • Two elements integrated in a common cathode configuration within a compact SOT23 package
  • Low diode capacitance for high-frequency RF switching applications
  • Low forward resistance providing minimal signal loss in the on-state
  • Qualified for automotive applications under the AEC-Q101 standard

RF Diode Applications

  • RF attenuators and switches
  • Bandswitch circuits for TV tuners
  • Series diodes for mobile communication transmit/receive switches

RF Diode Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure that the component meets the required automotive grade standards if deployed in vehicle systems. Cross-reference the marking code '7K%' with the datasheet to validate authenticity upon receipt.

RF Diode Selection Notes

Select this component when designing circuits requiring dual PIN diodes in a shared common cathode topology. Evaluate the maximum operating frequency against the specified isolation and insertion loss characteristics. Confirm that the thermal resistance and power dissipation limits align with the expected ambient conditions and bias currents in the target application.

RF Diode Part Context

This part belongs to the NXP Semiconductors discrete semiconductor portfolio, specifically categorized under silicon PIN diodes. It is manufactured by Philips Semiconductors (now NXP) and utilizes a plastic surface-mounted SOT23 package. The product specification defines its electrical parameters and physical dimensions for integration into electronic assemblies.

RF Diode Replacement Considerations

Consult the official NXP replacement guide for verified substitute part numbers. Do not assume compatibility based solely on package type; verify pinout, electrical ratings, and functional equivalence before implementation.

BAP65-05,215BAP65-05,215
$0.09
Buy Now

Recent News