RF Diode BAR6304WH6327XTSA1 product image

BAR6304WH6327XTSA1

$0.14
  • Description:RF DIODE PIN 50V 250MW PG-SOT323
  • Series:-

SKU:f511c3b6979e Category: Brand:

  
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BAR6304WH6327XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 50V 250MW PG-SOT323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR6304WH6327XTSA1

  • Description:RF DIODE PIN 50V 250MW PG-SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.3pF @ 5V, 1MHz
  • Resistance @ If, F:1Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR6304WH6327XTSA1

BAR6304WH6327XTSA1

RF Diode Overview

The BAR6304WH6327XTSA1 is a PIN diode RF component manufactured by Infineon Technologies. It features a series-connected, center-tapped configuration with two silicon elements housed in an SOT-323-3 package. Key electrical parameters include a minimum breakdown voltage of 50 V, a maximum reverse capacitance of 0.3 pF, and a maximum forward resistance of 2 Ω. The device operates within a frequency band designated as S Band, with a nominal minority carrier lifetime of 0.075 µs. It supports operating temperatures up to +150 °C and complies with RoHS standards.

RF Diode Feature Summary

  • Center-tapped dual-element architecture for balanced RF switching applications
  • Ultra-low junction capacitance suitable for high-frequency signal integrity
  • Automotive qualification compliant with AEC-Q100 standards

RF Diode Applications

  • RF antenna switching circuits
  • S-Band communication systems
  • High-frequency signal routing

RF Diode Procurement Notes

Verify current availability status as the component may be subject to discontinuation or limited supply conditions. Confirm that the specific ordering suffix matches the required packaging format. Ensure compliance with RoHS directives and check for any recent product change notifications before finalizing procurement plans.

RF Diode Selection Notes

Select this component when a center-tapped PIN diode configuration is required for balanced RF paths. The low capacitance value makes it appropriate for S-Band frequencies where minimal signal attenuation is critical. Verify that the 50 V breakdown voltage meets the circuit's peak reverse voltage requirements.

RF Diode Part Context

This part belongs to the BAR63 series of PIN diodes from Infineon Technologies. It shares the SOT-323-3 package form factor with other devices in the family but differs in internal configuration and electrical characteristics. The H6327 suffix indicates specific tape-and-reel packaging details.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative center-tapped PIN diodes with comparable capacitance and breakdown voltage specifications if direct replacement is necessary.

BAR6304WH6327XTSA1BAR6304WH6327XTSA1
$0.14
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