Diode Arrays BAS40-06/DG/B3R product image

BAS40-06/DG/B3R

  • Description:DIODE ARRAY SCHOTTKY 40V 120MA
  • Series:-

SKU:c7291950492c Category: Brand:

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BAS40-06/DG/B3R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is DIODE ARRAY SCHOTTKY 40V 120MA. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BAS40-06/DG/B3R

  • Description:DIODE ARRAY SCHOTTKY 40V 120MA
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):40 V
  • Current - Average Rectified (Io) (per Diode):120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 40 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for BAS40-06/DG/B3R

BAS40-06/DG/B3R

Diode Arrays Overview

The BAS40-06/DG/B3R is a dual Schottky barrier diode manufactured by Nexperia USA Inc. It features a common anode configuration in a SOT-23 (SC-74) surface-mount package. The device is rated for a maximum repetitive reverse voltage of 40 V and an average forward rectified current of 200 mA per anode. It exhibits a low forward voltage drop of approximately 1 V at specified currents and a maximum reverse leakage current of 10 µA. The component operates within a temperature range of -55°C to +150°C junction temperature and supports a forward surge current of 200 mA.

Diode Arrays Feature Summary

  • Dual Schottky barrier diode structure with common anode configuration
  • Low forward voltage drop for improved efficiency
  • High switching speed suitable for general-purpose applications
  • Automotive-grade qualification compliant with AEC-Q101 standards

Diode Arrays Applications

  • General-purpose rectification in consumer electronics
  • Clamping and protection circuits in automotive systems
  • Power supply input protection stages
  • Signal demodulation in RF applications

Diode Arrays Procurement Notes

Verify the specific suffix B3R corresponds to the required tape-and-reel packaging quantity and orientation for automated assembly lines. Confirm that the AEC-Q101 qualification meets the specific reliability requirements of the target automotive application. Ensure the SOT-23 footprint matches the PCB design guidelines provided in the official datasheet to prevent soldering defects during reflow processes.

Diode Arrays Selection Notes

Select this component when a dual Schottky diode with common anode topology is required in a compact SOT-23 package. It is suitable for designs needing 40 V reverse voltage blocking and 200 mA continuous forward current per diode. Consider its low forward voltage characteristics for efficiency-critical low-voltage circuits. Verify thermal management capabilities given the small surface-mount form factor and high junction temperature rating.

Diode Arrays Part Context

This part belongs to Nexperia's BAS40 series of general-purpose Schottky diodes. The series offers various configurations including single, dual, and quad arrangements in multiple small outline packages. The BAS40-06 variant specifically provides a dual common anode setup, distinguishing it from common cathode or single-diode options within the broader product family designed for space-constrained modern electronic assemblies.

Diode Arrays Replacement Considerations

  • BAS40-06/115
  • BAS40-06/Q

Diode Arrays FAQ

What is the maximum operating junction temperature for the BAS40-06/DG/B3R?

The maximum operating junction temperature is +150°C.

Does this component support automotive applications?

Yes, the BAS40-06 series is qualified according to AEC-Q101 standards for automotive use.

What is the reverse leakage current specification?

The maximum reverse leakage current is 10 µA at the rated reverse voltage.

BAS40-06/DG/B3RBAS40-06/DG/B3R

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