RF Diode BAT6806WE6327HTSA1 product image

BAT6806WE6327HTSA1

  • Description:DIODE SCHOTTKY 8V 150MW SOT323-3
  • Series:-

SKU:3a732e783b98 Category: Brand:

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BAT6806WE6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 8V 150MW SOT323-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT6806WE6327HTSA1

  • Description:DIODE SCHOTTKY 8V 150MW SOT323-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Common Anode
  • Voltage - Peak Reverse (Max):8V
  • Current - Max:130 mA
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:10Ohm @ 5mA, 10kHz
  • Power Dissipation (Max):150 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT6806WE6327HTSA1

BAT6806WE6327HTSA1

RF Diode Overview

The BAT6806WE6327HTSA1 is a silicon Schottky diode from the Infineon BAT68 series, housed in an SOT-323 package with a common anode configuration. It features a maximum reverse voltage of 8 V and a forward current rating of 130 mA. The device exhibits a typical forward voltage of 340 mV at 1 mA and 318 mV at 10 mA. Its total power dissipation is rated at 150 mW, with a junction temperature limit of 150 °C. The component includes low parasitic inductance (1.4 nH) and minimal diode capacitance (max 1 pF), supporting high-speed switching and RF mixer applications.

RF Diode Feature Summary

  • Designed for mixer applications in the VHF/UHF range
  • Suitable for high-speed switching applications
  • Low parasitic inductance for improved RF performance

RF Diode Applications

  • Mixer circuits in VHF/UHF frequency ranges
  • High-speed switching applications
  • RF signal processing

RF Diode Procurement Notes

Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure that the procurement channel provides valid traceability for automotive or industrial grade requirements if applicable. Confirm RoHS compliance through the manufacturer's latest release notes before finalizing orders.

RF Diode Selection Notes

Select this component when a common anode Schottky diode with low forward voltage drop is required for VHF/UHF applications. The SOT-323 package offers space efficiency compared to larger footprints. Consider the 8 V reverse voltage limit and 130 mA forward current capability during circuit design to ensure operation within safe thermal limits.

RF Diode Part Context

This part belongs to the Infineon BAT68 series of silicon Schottky diodes. The series includes variants like BAT68-04, BAT68-06, and BAT68-07W, each offering different configurations such as single, series, common anode, parallel pair, or parallel triple. The BAT6806WE specifically utilizes the SOT-323 package for compact surface-mount integration.

RF Diode Replacement Considerations

Direct substitutes within the same family include BAT68-06W in alternative packages. Verify pinout compatibility and electrical parameters such as forward voltage and reverse leakage current before substituting with other manufacturers' components.

BAT6806WE6327HTSA1BAT6806WE6327HTSA1

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