BDT60B-S

Single Bipolar Transistors Overview

The BDT60B-S is a PNP Darlington transistor manufactured by Bourns Inc. It features a single configuration housed in a TO-220-3 through-hole package. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 60 V, a maximum DC collector current of 4 A, and a minimum DC current gain (hFE) of 750. The device operates within a temperature range of -65 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• High current gain capability suitable for amplification applications
• Robust thermal performance with high maximum junction temperature rating
• Through-hole mounting for secure mechanical attachment

Single Bipolar Transistors Applications

• Power switching circuits
• Audio amplifier stages
• Motor control interfaces

Single Bipolar Transistors Procurement Notes

Verify component authenticity against official Bourns documentation due to potential availability constraints. Confirm RoHS compliance status as indicated in distributor records. Ensure the specific suffix matches design requirements before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high input impedance and substantial current handling in a standard through-hole format. Evaluate thermal management needs given the 50 W power dissipation capability and operating temperature limits.

Single Bipolar Transistors Part Context

This part belongs to the Bourns Darlington transistor series, designed for general-purpose power switching and amplification. The TO-220-3 package provides efficient heat dissipation for medium-power applications.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent PNP Darlington transistors with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before implementation.