BDW46G

Single Bipolar Transistors Overview

The BDW46G is a PNP silicon Darlington power transistor manufactured by onsemi. It features an 80 Vdc collector-emitter sustaining voltage and a continuous collector current rating of 15 Adc. The device dissipates up to 85 W at a case temperature of 25°C, with a thermal resistance junction-to-case of 1.47 °C/W. DC current gain reaches 2500 typically at 5.0 Adc, while saturation voltage remains low at 2.0 Vdc maximum under the same conditions. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Monolithic construction incorporating built-in base-emitter shunt resistors for stability.
• High DC current gain capability suitable for general-purpose switching applications.
• Low collector-emitter saturation voltage to minimize conduction losses.
• Pb-Free and RoHS compliant packaging.

Single Bipolar Transistors Applications

• General purpose switching circuits
• Low speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm polarity and voltage ratings. Ensure that the procurement channel provides valid traceability for the Pb-Free designation. Cross-reference the ordering information section of the datasheet to validate package type and shipping configurations before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP Darlington configuration is required. The 80 V rating distinguishes it from complementary NPN variants in the series. Evaluate thermal management requirements based on the 85 W dissipation limit and derating curves. Confirm that the application operates within the specified safe operating area limits for reliable performance.

Single Bipolar Transistors Part Context

This component belongs to the BDW42/BDW46/BDW47 complementary series of medium-power silicon Darlington transistors. Designed for robustness in power handling, the series utilizes monolithic construction. The BDW46G specifically serves as the PNP counterpart to the BDW42G NPN device, sharing similar physical dimensions and mounting characteristics within the TO-220 package family.

Single Bipolar Transistors Replacement Considerations

Complementary substitutes include the BDW42G (NPN) and BDW47G (PNP). Verify voltage ratings carefully, as the BDW47G offers 100 V compared to the BDW46G's 80 V. Ensure pinout compatibility and thermal resistance specifications match the existing design constraints before substitution.