Single FETs, MOSFETs BFL4001-1E product image

BFL4001-1E

  • Description:MOSFET N-CH 900V 4.1A TO220-3 FP
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:bccd1c016665 Category: Brand:

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BFL4001-1E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 4.1A TO220-3 FP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BFL4001-1E

  • Description:MOSFET N-CH 900V 4.1A TO220-3 FP
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):900 V
  • Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.7Ohm @ 3.25A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 37W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3 Fullpack/TO-220F-3SG
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for BFL4001-1E

BFL4001-1E

Single FETs, MOSFETs Overview

The onsemi BFL4001-1E is a single N-channel MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 900V and a continuous drain current of 6.5A at ambient temperature. The device utilizes a TO-220-3 Fullpack package, providing robust thermal performance with a power dissipation capability of 2W at ambient temperature and 37W at the case level. Key electrical characteristics include a maximum gate-source voltage of ±30V, an input capacitance of 850pF at 30V, and a gate charge of 44nC at 10V. The component operates within a junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

  • High breakdown voltage capability suitable for demanding power switching environments
  • Integrated thermal design in a through-hole package for efficient heat dissipation
  • Low gate charge characteristics supporting efficient drive requirements

Single FETs, MOSFETs Applications

  • High voltage power supply circuits
  • Industrial motor control systems
  • Inverter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '1EX' or '1E' against the manufacturer's latest datasheet to confirm exact mechanical and electrical tolerances. Confirm end-of-life status and availability of qualified replacement components before finalizing designs. Ensure compliance with RoHS and REACH regulations as specified in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and moderate current handling are required in a through-hole configuration. Evaluate thermal management needs based on the specified power dissipation ratings at both ambient and case temperatures. Consider the gate charge specifications for driver compatibility in high-frequency switching applications.

Single FETs, MOSFETs Part Context

This part belongs to the BFL series of N-channel MOSFETs from onsemi, which are engineered for general-purpose high-voltage switching. The series emphasizes reliability and thermal stability, making it suitable for industrial and commercial power electronics where robust performance under high stress conditions is essential.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers were not identified in the provided source material. Verify cross-reference data directly with the manufacturer or authorized distributors to ensure pinout and parameter compatibility.

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