BMS4007

Single FETs, MOSFETs Overview

The BMS4007 is an N-channel power MOSFET from onsemi, housed in a TO-220ML(LS) package. It features a drain-to-source voltage (V_DSS) of 75 V and a continuous drain current (I_D) of 60 A at 25°C case temperature. The device exhibits a typical static drain-to-source on-state resistance (R_DS(on)) of 6 mΩ at V_GS=10V and I_D=30A, with a maximum of 7.8 mΩ. Key electrical characteristics include a total gate charge (Q_g) of 160 nC, input capacitance (C_iss) of 9700 pF, and a forward transfer admittance (|y_fs|) of 110 S. The component supports a pulsed drain current of 240 A and operates within a channel temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

• Low on-resistance for efficient power switching
• High current handling capability
• Optimized for 10V drive applications

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant and marking code upon receipt to ensure alignment with the TO-220ML(LS) specification. Confirm that the received components match the ordering number ENA1820. Check for physical integrity of the leads and case. Ensure storage conditions comply with moisture sensitivity levels if applicable. Validate datasheet revisions against the manufacturing date code.

Single FETs, MOSFETs Selection Notes

Select this component when a 75V rating and high current capacity are required. The low R_DS(on) makes it suitable for applications prioritizing conduction loss reduction. Ensure the driving circuit can provide a minimum 10V gate-source voltage to achieve optimal performance. Consider thermal management requirements given the 60A continuous current rating and associated power dissipation limits.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's discrete power MOSFET portfolio, designed for general-purpose power switching. It utilizes silicon technology and is packaged in a leaded plastic outline suitable for through-hole mounting. The device is intended for use in environments requiring robust performance under high current loads and moderate voltage stresses.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 75V V_DSS, 60A I_D, and TO-220ML(LS) package. Verify R_DS(on) and Q_g parameters to ensure equivalent switching and conduction losses. Cross-reference pinouts to confirm Gate-Drain-Source alignment.