BQ4014MB-85

Memory IC Overview

The Texas Instruments BQ4014MB-85 is a nonvolatile static RAM device organized as 262,144 words by 8 bits. It integrates control circuitry and an internal lithium energy source to provide data retention without external components. The maximum access time is 85 ns. The supply voltage range is 4.75 V to 5.5 V. Standby current is typically 5 mA. Operating temperature is 0°C to +70°C.

Memory IC Feature Summary

• Integrates an internal lithium coin cell for nonvolatility
• Automatically write-protects memory during power transitions
• Maintains data for over ten years without system power
• Compatible with standard industry SRAM pinouts

Memory IC Applications

• Industrial systems requiring persistent configuration storage
• Embedded controllers needing reliable parameter preservation
• Equipment demanding high endurance for frequent data updates

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the component meets all required electrical specifications for the intended application environment. Ensure compatibility with existing system architectures and verify compliance with relevant regulatory standards.

Memory IC Selection Notes

Select this component when long-term data retention is critical without relying on external batteries. Consider the operating temperature range and supply voltage requirements of the target system. Evaluate the need for unlimited write cycles compared to EEPROM alternatives. Verify package dimensions fit the available board space constraints.

Memory IC Part Context

This part belongs to the bq4014 series of nonvolatile SRAM devices manufactured by Texas Instruments. The series combines standard CMOS SRAM performance with battery-backed nonvolatility. The MB designation indicates a specific module package type designed for through-hole mounting in industrial applications.

Memory IC Replacement Considerations

BQ4014YMB-85