BSB013NE2LXIXUMA1

Single FETs, MOSFETs Overview

The BSB013NE2LXIXUMA1 is a low-voltage N-channel power MOSFET from Infineon Technologies, utilizing DirectFET(M) packaging. It features a drain-source voltage rating of 25 V and a maximum continuous drain current of 36 A at 25°C. The device exhibits a typical on-resistance of 1.8 mΩ at 4.5 V gate drive. Key electrical parameters include a gate charge of 30 nC at 4.5 V and 62 nC at 10 V. It supports a pulsed drain current of 400 A and has a thermal resistance of 1 K/W. The component operates within a temperature range of -40 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• Monolithically integrated Schottky-like diode for efficient body diode replacement
• DirectFET(M) package design enabling superior thermal performance and low inductance
• Optimized gate charge characteristics for high-speed switching applications

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Synchronous rectification stages
• Automotive power management systems

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific variant matches the required automotive qualification standards if applicable. Cross-reference the datasheet revision date with your project timeline to ensure compatibility with latest manufacturing specifications. Ensure procurement channels are authorized to guarantee component authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses and high current density in compact form factors. The integrated diode feature simplifies circuit topology by eliminating external freewheeling diodes. Evaluate the thermal requirements based on the 1 K/W junction-to-case resistance. Consider the 25 V voltage headroom when designing for 12 V or 24 V automotive bus architectures.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS™ Power-Transistors family, specifically designed for low-voltage applications. The DirectFET technology integrates the die directly onto the substrate to minimize parasitic inductances. This series targets demanding power conversion environments where efficiency and size are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Generic cross-references may not match the unique DirectFET thermal profile or integrated diode characteristics.