SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
BSB280N15NZ3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 9A/30A 2WDSON. Review the specifications below when checking this part for your BOM.
The BSB280N15NZ3GXUMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 3 family, housed in a WDSON-2-3 (CanPAK3 MZ) surface-mount package. It features a drain-source breakdown voltage of 150 V and a continuous drain current rating of 30 A at 25°C. The device exhibits a maximum on-resistance of 28 mΩ with a gate charge of 21 nC. It operates within a temperature range of -40°C to +150°C and supports a power dissipation of 57 W.
Verify the complete ordering code includes the XUMA1 suffix for tape-and-reel packaging. Confirm component authenticity through authorized channels as this part may be subject to obsolescence notices. Ensure ESD protection protocols are followed during handling due to the sensitivity of the gate oxide layer in small outline packages.
Select this component when a compact solution is required for 150 V applications demanding low conduction losses. The WDSON-2-3 package offers thermal performance suitable for space-constrained designs. Evaluate the 28 mΩ resistance against system efficiency targets and ensure the 30 A current rating aligns with peak load requirements.
This device belongs to the OptiMOS 3 portfolio, which integrates advanced trench gate technology with optimized cell layout. The CanPAK3 MZ form factor reduces parasitic inductance compared to traditional packages, enhancing dynamic performance in high-speed switching environments typical of modern power electronics.
Check datasheets for alternative OptiMOS 3 devices with matching 150 V ratings and similar Rds(on) values. Verify pin compatibility and thermal characteristics before substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

BSB280N15NZ3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V…
Read More
Learn what an IMU measures, how accelerometers and gyroscopes work together, why orientation estimates drift, and what to compare.
Read More
Select a bridge rectifier by reverse voltage, capacitor charging current, startup surge and cooling. Work through a stated DC voltage and ripple example.
Read More
BSB280N15NZ3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V…
Read More
BSB280N15NZ3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V…
Read More
BSB280N15NZ3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V…
Read MoreBSB280N15NZ3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V…
Read More
BSB280N15NZ3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V…
Read More
Explore electronic component types, functions, packages and datasheets. Learn selection, replacement and BOM checks before ordering parts for your PCB.
Read More
BSB280N15NZ3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V…
Read More
Learn how rectifiers convert AC to DC, compare half-wave and bridge circuits, and select voltage, current, recovery and thermal ratings for your design.
Read More
Choose a DIP switch by contact type, coded positions, footprint and signal ratings. Check logic polarity, assembly conditions and PCB configuration behavior.
Read More