Single FETs, MOSFETs BSB280N15NZ3GXUMA1 product image

BSB280N15NZ3GXUMA1

$2.52
  • Description:MOSFET N-CH 150V 9A/30A 2WDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:f94b7cb46c3f Category: Brand:

  
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BSB280N15NZ3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 9A/30A 2WDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB280N15NZ3GXUMA1

  • Description:MOSFET N-CH 150V 9A/30A 2WDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:9A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:28mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:4V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 75 V
  • FET Feature:-
  • Power Dissipation (Max):2.8W (Ta), 57W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:MG-WDSON-2, CanPAK M™
  • Package / Case:3-WDSON

Single FETs, MOSFETs datasheet and documents for BSB280N15NZ3GXUMA1

BSB280N15NZ3GXUMA1

Single FETs, MOSFETs Overview

The BSB280N15NZ3GXUMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 3 family, housed in a WDSON-2-3 (CanPAK3 MZ) surface-mount package. It features a drain-source breakdown voltage of 150 V and a continuous drain current rating of 30 A at 25°C. The device exhibits a maximum on-resistance of 28 mΩ with a gate charge of 21 nC. It operates within a temperature range of -40°C to +150°C and supports a power dissipation of 57 W.

Single FETs, MOSFETs Feature Summary

  • OptiMOS 3 technology providing low on-resistance for high efficiency
  • Integrated active Miller clamp capability for robust switching
  • Lead-free plastic molding compound compliant with RoHS standards

Single FETs, MOSFETs Applications

  • High-frequency DC-DC converters
  • Synchronous rectification circuits
  • Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering code includes the XUMA1 suffix for tape-and-reel packaging. Confirm component authenticity through authorized channels as this part may be subject to obsolescence notices. Ensure ESD protection protocols are followed during handling due to the sensitivity of the gate oxide layer in small outline packages.

Single FETs, MOSFETs Selection Notes

Select this component when a compact solution is required for 150 V applications demanding low conduction losses. The WDSON-2-3 package offers thermal performance suitable for space-constrained designs. Evaluate the 28 mΩ resistance against system efficiency targets and ensure the 30 A current rating aligns with peak load requirements.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS 3 portfolio, which integrates advanced trench gate technology with optimized cell layout. The CanPAK3 MZ form factor reduces parasitic inductance compared to traditional packages, enhancing dynamic performance in high-speed switching environments typical of modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative OptiMOS 3 devices with matching 150 V ratings and similar Rds(on) values. Verify pin compatibility and thermal characteristics before substituting.

BSB280N15NZ3GXUMA1BSB280N15NZ3GXUMA1
$2.52
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