BSC005N03LS5IATMA1

$2.13

Description：TRENCH <= 40V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d49339c1c859 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC005N03LS5IATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC005N03LS5IATMA1

Description：TRENCH <= 40V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：42A (Ta), 433A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.55mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：128 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 188W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8 FL
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC005N03LS5IATMA1

BSC005N03LS5IATMA1

Single FETs, MOSFETs Overview

The BSC005N03LS5IATMA1 is an N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 30 V drain-source voltage rating and a continuous drain current of 433 A at 25°C. The device offers a maximum on-resistance of 0.55 mΩ at 10 V gate drive and 0.95 mΩ at 4.5 V. Typical gate charges are 128 nC at 10 V and 63 nC at 4.5 V. It operates within a temperature range of -55°C to +175°C and is housed in a SuperSO8 5x6 surface-mount package.

Single FETs, MOSFETs Feature Summary

Logic-level gate threshold enabling direct drive from standard logic interfaces.
Monolithically integrated Schottky-like diode for synchronous rectification applications.

Single FETs, MOSFETs Applications

Synchronous rectification in DC-DC converters
Low-voltage power switching circuits
Automotive electronics requiring high current handling

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 to confirm tape-and-reel packaging configuration. Ensure compatibility with the SuperSO8 5x6 footprint during PCB layout. Cross-reference official datasheets for thermal resistance values relevant to your specific mounting conditions.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance at 4.5 V gate drive is critical for efficiency. The high current capability suits applications demanding significant load handling. Verify that the operating voltage remains within the 30 V limit and that thermal management supports the specified junction temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of low-voltage power MOSFETs designed for high-efficiency switching. The series emphasizes reduced conduction losses and integrated body diode characteristics suitable for modern power management topologies.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the SuperSO8 5x6 package and maintains equivalent electrical ratings.