BU508A

Single Bipolar Transistors Overview

The BU508A is a high voltage fast-switching NPN power transistor manufactured by STMicroelectronics using Multiepitaxial Mesa technology and a Hollow Emitter structure. It features a TO-3 package with a collector-emitter sustaining voltage (VCEO) of 700 V and a collector-emitter breakdown voltage (VCES) of 1500 V. The device supports an 8 A continuous collector current and a 15 A peak collector current. Total power dissipation is rated at 125 W at a case temperature of 25 °C, with a maximum operating junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

• Hollow Emitter structure enhances switching speeds for high performance applications
• Fully insulated package compliant with U.L. standards for easy mounting
• Multiepitaxial Mesa technology provides cost-effective high voltage capability

Single Bipolar Transistors Applications

• Horizontal deflection circuits for color television sets

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels as the datasheet indicates this product is obsolete. Confirm specific lot codes and manufacturing dates to ensure compliance with current safety standards. Request updated documentation from suppliers regarding availability of equivalent replacement components or alternative series that maintain similar electrical characteristics and package dimensions.

Single Bipolar Transistors Selection Notes

Select the BU508A when designing horizontal deflection stages requiring high voltage handling and fast switching capabilities. Ensure thermal management solutions can maintain the case temperature within limits to support the 125 W power dissipation rating. Verify that the driving circuitry can provide sufficient base current to achieve the specified saturation voltages during operation.

Single Bipolar Transistors Part Context

This component belongs to the BU208A/BU508A/BU508AFI family of high voltage fast-switching NPN power transistors. These devices utilize advanced semiconductor processes to deliver robust performance in demanding power electronics environments. The family shares core technological attributes while offering variations in packaging and specific thermal ratings to suit different mechanical integration requirements.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.