BUJ302AX,127

Single Bipolar Transistors Overview

The BUJ302AX,127 is a high-voltage, high-speed planar passivated NPN power switching transistor manufactured by WeEn Semiconductors. It utilizes silicon technology and is housed in a SOT186A (TO-220F) full pack plastic package designed for through-hole mounting. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 400 V, a collector-base voltage (VCBO) of 1050 V, and a continuous collector current (IC) of 4 A. The device supports a total power dissipation (Ptot) of 26 W and operates at a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• High-speed planar passivated NPN structure optimized for efficient power switching applications
• Robust high-voltage capability with a collector-base voltage rating of 1050 V
• Designed for industrial qualification standards to ensure reliability in demanding environments

Single Bipolar Transistors Applications

• Power supply units
• Industrial switching circuits
• High-voltage power management systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and package variant when sourcing, as manufacturing updates or regional distribution channels may affect availability. Confirm compliance documentation such as RoHS status and chemical content reports directly with the supplier or manufacturer before finalizing procurement decisions to ensure alignment with project requirements.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-voltage isolation combined with rapid switching speeds. The TO-220F package facilitates effective thermal management for moderate power levels. Ensure the circuit design accommodates the 4 A current limit and that heat sinking strategies are adequate for the 26 W power dissipation rating under expected operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the BUJ series of high-voltage bipolar junction transistors from WeEn Semiconductors. These devices are engineered for robust performance in power electronics, offering a balance of high voltage blocking capabilities and fast switching characteristics suitable for modern industrial and consumer power conversion topologies.

Single Bipolar Transistors Replacement Considerations

Check datasheets for alternative NPN transistors with similar VCEO, VCBO, and IC ratings. Verify pinout compatibility and thermal resistance values to ensure direct substitution without modifying the printed circuit board layout or cooling infrastructure.