BUT11

Single Bipolar Transistors Overview

The BUT11 is an NPN silicon epitaxial planar transistor designed for high voltage power switching applications. It features a collector-emitter sustaining voltage of 400 V and a continuous collector current rating of 5 A. The device is housed in a TO-220 package with a thermal resistance from junction to case of 1.25 °C/W. It supports a maximum collector dissipation of 100 W at 25°C case temperature and operates within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

• Engineered for high voltage power switching environments
• Utilizes NPN silicon epitaxial planar construction
• Provides robust thermal performance via TO-220 mounting

Single Bipolar Transistors Applications

• High voltage power switching circuits
• General purpose power amplification
• Industrial control systems requiring high voltage isolation

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation, as the BUT11A variant offers a higher collector-emitter voltage rating compared to the standard BUT11. Confirm that the TO-220 package dimensions align with your board layout requirements. Ensure that the thermal management solution can handle the specified 100 W dissipation limit when operating at elevated case temperatures. Cross-reference the datasheet revision date to confirm the most current electrical characteristics are being utilized for design validation.

Single Bipolar Transistors Selection Notes

Select the BUT11 when designing circuits that require reliable operation at voltages up to 400 V with moderate current handling capabilities. Consider the BUT11A if the application demands a higher breakdown voltage margin up to 450 V. Evaluate the thermal resistance specifications to ensure adequate heat sinking is implemented for sustained high-power operations. Verify that the switching times meet the dynamic requirements of the target application frequency.

Single Bipolar Transistors Part Context

This component belongs to the family of high voltage NPN bipolar junction transistors manufactured by ON Semiconductor. It serves as a discrete power semiconductor device intended for use in applications where standard low-voltage transistors cannot withstand the required electrical stress levels. The device represents a legacy product line originally developed by Fairchild Semiconductor before its integration into ON Semiconductor.

Single Bipolar Transistors Replacement Considerations

Check the official ON Semiconductor website for updated part numbers resulting from the Fairchild Semiconductor integration. Verify compatibility with direct replacements by comparing absolute maximum ratings and pin configurations.