CDB7620-000

RF Diode Overview

The CDB7620-000 is a P-type silicon Schottky barrier diode universal chip designed for Ku band applications. It features a low barrier design with a typical tangential signal sensitivity (TSS) of -40 dBm at a 50 μA bias and 10 MHz video bandwidth. The device exhibits a maximum reverse voltage of 2 V, a forward current rating of 100 mA, and an RF input power capability of 75 mW at 25 °C. Electrical specifications include a typical junction capacitance of 0.15 pF at 0 V, a forward voltage of 30 mV at 1 mA, and a slope resistance of 30 Ω at 10 mA. Operating temperature ranges from -55 °C to +150 °C.

RF Diode Feature Summary

• P-type silicon construction optimized for low noise characteristics in the 1/f region
• Planar passivated beam-lead and chip design suitable for microwave integrated circuits
• Large bond pad configuration ensures mechanical protection during wire bonding

RF Diode Applications

• Microwave integrated circuit (MIC) detector applications
• Doppler mixers requiring high sensitivity
• High-sensitivity detectors operating in the Ku band

RF Diode Procurement Notes

Verify that the specific order matches the required frequency band and electrical parameters. Confirm handling procedures align with Skyworks Application Notes regarding waffle pack or gel-pack carriers. Ensure electrostatic discharge precautions are strictly followed during assembly to prevent damage to the sensitive junction.

RF Diode Selection Notes

Select this component when Ku band detection is required with low noise performance. Consider the P-type material for superior 1/f noise characteristics compared to N-type alternatives. Evaluate the need for small forward bias to optimize video impedance and sensitivity while managing potential noise increases.

RF Diode Part Context

This part belongs to Skyworks' Silicon Schottky Barrier Diode Bondable Chips and Beam Leads family. It is categorized alongside other universal chips like CDB7619-000 and beam-lead diodes such as DDB2503/04. These components share common manufacturing processes involving epitaxial silicon substrates and barrier metal deposition for consistent impedance control.

RF Diode Replacement Considerations

The CDB7619-000 is a documented alternative within the same datasheet offering K band performance with different electrical characteristics. Verify compatibility regarding frequency band requirements and bias conditions before substitution.