CDE7618-000

RF Diode Overview

The CDE7618-000 is an N-type silicon Schottky barrier diode chip designed for microwave applications up to 40 GHz in the K band. It features a medium barrier design with a maximum reverse voltage of 2 V and a forward current rating of 100 mA. The device exhibits a typical junction capacitance of 0.10 pF at 0 V, a maximum video resistance of 500 Ω, and a slope resistance of 3 Ω at 10 mA. Operating temperatures range from -55°C to +150°C.

RF Diode Feature Summary

• N-type silicon construction optimized for low conversion loss mixers and biased detectors
• Planar passivated beam-lead and chip design ensuring close impedance control
• Large bond pad configuration to prevent mechanical damage during wire bonding

RF Diode Applications

• Microwave integrated circuit (MIC) detector modules
• K-band mixer circuits requiring low conversion loss
• Biased detector applications in commercial and industrial systems

RF Diode Procurement Notes

Verify component authenticity through authorized Skyworks channels or certified distributors. Confirm package integrity upon receipt, as these are bare die components sensitive to electrostatic discharge. Ensure handling procedures comply with industry standards to prevent junction damage during assembly.

RF Diode Selection Notes

Select this N-type variant specifically for designs prioritizing low conversion loss in mixers or requiring biased detector operation. Contrast with P-type alternatives which offer superior 1/f noise characteristics suitable for high-sensitivity un-biased detection. Evaluate thermal management requirements against the specified operating temperature limits.

RF Diode Part Context

This component belongs to Skyworks' family of silicon Schottky barrier diode bondable chips and beam leads. It shares common manufacturing processes and physical dimensions with related models such as CDF7621-000 and CME7660-000, differing primarily in doping type and specific electrical parameters tailored for distinct frequency bands and application profiles.

RF Diode Replacement Considerations

CDF7621-000 serves as a comparable N-type alternative within the same datasheet, offering similar structural characteristics but optimized for different frequency bands.