CY14V101LA-BA45XIT

Memory IC Overview

The CY14V101LA-BA45XIT is a non-volatile static random-access memory (nvSRAM) device manufactured by Infineon Technologies. It provides a storage capacity of 1 Megabit, organized as 128K words by 8 bits. The component features a parallel interface with an access time of 45 nanoseconds. It operates within a voltage range of 2.7 Volts to 3.6 Volts and supports industrial temperature conditions from -40°C to +85°C. The device is housed in a 48-ball Fine-Pitch Ball Grid Array (FBGA) package.

Memory IC Feature Summary

• Combines SRAM speed with non-volatile data retention without requiring external battery backup circuits
• Provides automatic data preservation during power loss events to ensure system integrity
• Supports standard parallel interface protocols for straightforward integration into existing designs

Memory IC Applications

• Industrial automation control systems requiring persistent configuration storage
• Automotive electronic modules needing reliable data retention under varying thermal conditions
• Network infrastructure equipment utilizing volatile memory for high-speed processing with non-volatile fallback

Memory IC Procurement Notes

Verify the specific suffix BA45XIT against official Infineon documentation to confirm package type, temperature grade, and tape-and-reel packaging specifications. Ensure compatibility with moisture sensitivity levels and reflow soldering profiles defined in the datasheet. Confirm end-of-life status and long-term availability commitments prior to final design approval.

Memory IC Selection Notes

Select this component when a 1-Mbit density with 45-nanosecond access speed is required in an FBGA form factor. Consider the 2.7V to 3.6V operating range and industrial temperature limits. Evaluate pinout compatibility if replacing legacy nvSRAM devices. Verify that the parallel interface matches the host controller capabilities.

Memory IC Part Context

This part belongs to the CY14V101LA series of nvSRAM products. It serves as a drop-in replacement for standard SRAM in applications where data persistence is critical. The series offers various speed grades and package options to accommodate different performance and space constraints in embedded systems.

Memory IC Replacement Considerations

Check for direct pin-compatible alternatives within the CY14V101 family with different speed grades or packages. Verify functional equivalence with other 1-Mbit nvSRAM devices from Infineon before substitution.