Diode Arrays DD1200S12H4 product image

DD1200S12H4

  • Description:DIODE MODULE GP 1200V AGIHMB1302
  • Series:-

SKU:158d965b0a49 Category: Brand:

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DD1200S12H4 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 1200V AGIHMB1302. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD1200S12H4

  • Description:DIODE MODULE GP 1200V AGIHMB1302
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Diode Configuration:2 Independent
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):-
  • Voltage - Forward (Vf) (Max) @ If:2.35 V @ 1200 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-IHMB130-2
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for DD1200S12H4

DD1200S12H4

Diode Arrays Overview

The DD1200S12H4 is a high-power diode module from Infineon Technologies, housed in the IHM-B package. It features a repetitive peak reverse voltage of 1200 V and a continuous DC forward current of 1200 A. The maximum power dissipation reaches 1200 kW at a junction temperature of 125°C. Forward voltage characteristics vary with temperature, ranging from 1.70 V to 2.35 V across -40°C to 150°C operating conditions. The module provides 4 kV AC insulation for one minute and utilizes a copper baseplate with an aluminum oxide internal isolation layer.

Diode Arrays Feature Summary

  • High power density design utilizing the IHM-B housing configuration
  • Extended operating junction temperature range up to 150°C
  • Robust electrical isolation rated at 4 kV AC for one minute
  • Package constructed with a copper baseplate and CTI exceeding 400

Diode Arrays Applications

  • High power converters
  • Motor drives
  • Multi-level inverters
  • Wind turbines

Diode Arrays Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific batch matches the datasheet revision V2.3 requirements. Ensure proper handling procedures are followed due to the industrial quality grade. Review valid application notes regarding mounting torque specifications before installation. Validate material content sheets against project compliance standards.

Diode Arrays Selection Notes

Evaluate thermal resistance parameters carefully, noting the junction-to-case value of 40.0 K/kW per diode. Consider the stray inductance of 18 nH when designing circuit layouts to minimize switching losses. Assess the safe operation area limits under varying junction temperatures. Verify compatibility with existing cooling systems given the 1300 g weight and mechanical dimensions.

Diode Arrays Part Context

This component belongs to the IHM-B module series designed for demanding industrial applications. It serves as a critical switching element within high-voltage power conversion systems. The module integrates advanced semiconductor technology to handle significant current loads efficiently while maintaining structural integrity under thermal stress.

Diode Arrays Replacement Considerations

Cross-reference with other IHM-B series modules for mechanical fit. Verify electrical ratings match system requirements precisely. Check dynamic data validity conditions specified in the documentation.

DD1200S12H4DD1200S12H4

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