DD250S65K3NOSA1

$1,045.88

Description：DIODE MODULE GP 6500V AIHV130-6
Series：-

SKU:3e4b2560ac87 Category: Diode Arrays Brand: Infineon Technologies

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Product introduction

DD250S65K3NOSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE MODULE GP 6500V AIHV130-6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for DD250S65K3NOSA1

Description：DIODE MODULE GP 6500V AIHV130-6
Series：-
Mfr：Infineon Technologies
Package：Tray
Diode Configuration：2 Independent
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：6500 V
Current - Average Rectified (Io) (per Diode)：-
Voltage - Forward (Vf) (Max) @ If：3.5 V @ 250 A
Speed：Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Operating Temperature - Junction：-50°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：A-IHV130-6
Grade：-
Qualification：-

Diode Arrays datasheet and documents for DD250S65K3NOSA1

DD250S65K3NOSA1

Diode Arrays Overview

The DD250S65K3NOSA1 is a high-voltage IGBT module from Infineon Technologies, belonging to the Diodes IGBT EC3 Module series. It features a dual configuration with silicon technology and an IHV package. The component supports a maximum collector-emitter voltage of 6.5 kV and a continuous collector current of 250 A at 25°C. Power dissipation reaches 1 MW, with an operating temperature range from -50°C to +125°C.

Diode Arrays Feature Summary

Dual configuration for integrated power switching applications
High voltage rating suitable for demanding industrial environments
Robust thermal performance with significant power dissipation capacity

Diode Arrays Applications

Industrial traction systems
High-power industrial drives
Medium voltage motor control

Diode Arrays Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to ensure correct variant selection. Confirm RoHS compliance status and specific packaging requirements directly with authorized distributors or the manufacturer before placing orders. Cross-reference part numbers to avoid confusion with similar models in the same series.

Diode Arrays Selection Notes

Select this module for applications requiring high voltage isolation and substantial current handling capabilities. Ensure the cooling system design accommodates the specified power dissipation and junction temperature limits. Verify that the drive circuitry matches the switching characteristics of the IGBT technology used in this specific component.

Diode Arrays Part Context

This component is part of Infineon's Diodes IGBT EC3 Module family, designed for robust performance in high-power electronics. The series emphasizes reliability and efficiency for industrial and traction applications. The specific model integrates advanced silicon technology within a standardized package format for ease of integration into larger power modules.