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DG4157EDN-T1-GE4
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Product Detailed Parameters
- Description：IC SWITCH SPDT X 1 1.2OHM 6UDFN
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Switch Circuit：SPDT
- Multiplexer/Demultiplexer Circuit：2:01
- On-State Resistance (Max)：1.2Ohm
- Channel-to-Channel Matching (ΔRon)：120mOhm (Max)
- Voltage - Supply, Single (V+)：1.65V ~ 5.5V
- Voltage - Supply, Dual (V±)：-
- Switch Time (Ton, Toff) (Max)：32ns, 28ns
- -3db Bandwidth：152MHz
- Charge Injection：-5pC
- Channel Capacitance (CS(off), CD(off))：-
- Current - Leakage (IS(off)) (Max)：3nA
- Crosstalk：-41dB @ 10MHz
- Operating Temperature：-40°C ~ 85°C
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN
- Supplier Device Package：6-µDFN (1x1)
- Number of Circuits：1
- Grade：-
- Qualification：-
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Overview
The DG4157EDN-T1-GE4 is a high-performance single-pole, double-throw (SPDT) analog switch designed for 1.65 V to 5.5 V single-supply operation. Fabricated with high-density CMOS technology, it achieves an on-resistance of 0.86 Ω at 4.5 V and features fast switching speeds with a typical -3 dB bandwidth of 152 MHz. The device handles signals up to V+ in either direction, includes break-before-make switching, and offers powered-off isolation. It operates within a temperature range of -40 °C to +85 °C and is housed in a compact μDFN-6L package.
Feature Summary
- Break-before-make switching performance prevents signal overlap during transitions
- Built-in powered-off protection circuit prevents abnormal current flow from COM pin to V+
- Control logic inputs can exceed the positive supply voltage up to 5.5 V
- High electrostatic discharge tolerance exceeding 7 kV via human body model
Applications
- Smartphones and tablets
- Consumer electronics and computing devices
- Portable instrumentation
- Medical equipment
Procurement Notes
Verify the ordering suffix 'DN' corresponds to the μDFN-6L package configuration rather than the SC-70-6 variant. Confirm RoHS compliance status matches the specific manufacturing lot requirements. Ensure the component meets the required operating temperature range specifications for the intended deployment environment before finalizing procurement orders.
Selection Notes
Select this component when a low on-resistance of approximately 0.86 Ω is required for minimal signal attenuation. The guaranteed 1.8 V logic high threshold allows compatibility with various control logic levels. Consider the ultra-compact μDFN-6L footprint if board space constraints are critical for the design implementation.
Part Context
This part belongs to the Vishay Siliconix DG4157E series of SPDT analog switches. It utilizes high-density CMOS technology to deliver low power consumption alongside fast switching capabilities. The series is engineered for applications requiring reliable signal routing in portable and battery-operated electronic systems.
Replacement Considerations
The DG4157EDL-T1-GE3 serves as a functional alternative utilizing the SC-70-6 package instead of the μDFN-6L form factor. Verify that the physical dimensions and pinout configurations align with the existing printed circuit board layout before substituting.
