DG419DY-E3

Overview

The DG419DY-E3 is a precision monolithic CMOS analog switch manufactured by Vishay Siliconix, housed in an 8-lead narrow SOIC surface-mount package. It features a single SPDT configuration with TTL and CMOS compatible logic inputs. The device supports dual supply voltages ranging from ±5 V to ±20 V (max 44 V) or single supplies up to 40 V. Key electrical parameters include a maximum on-resistance of 35 Ω at room temperature and 45 Ω across the full operating range, a turn-on time of 175 ns, and ultra-low power consumption with standby currents under 1 μA. It operates within a temperature range of -40 °C to +85 °C.

Feature Summary

• Break-before-make switching action ensures reliable signal routing without shorting paths.
• High-voltage silicon gate process provides superior switching performance and latchup protection.
• Low on-resistance and low leakage currents maintain signal integrity in precision applications.

Applications

• Precision test equipment
• Sample-and-hold circuits
• Battery powered systems

Procurement Notes

Verify the specific suffix 'E3' confirms RoHS compliance when sourcing. Confirm the 'DY' designation corresponds to the 8-pin narrow SOIC package for PCB layout compatibility. Ensure the ordering quantity matches the manufacturer's standard tube or tape-and-reel specifications to avoid packaging discrepancies during assembly.

Selection Notes

Select this component for designs requiring a single-pole double-throw topology with fast switching speeds. Verify that the required analog signal range fits within the ±15 V limit for optimal performance. Consider the 35 Ω on-resistance tolerance against the load requirements to ensure acceptable voltage drop and distortion levels in the target circuit.

Part Context

This part belongs to the DG417/DG418/DG419 series of precision analog switches. While the DG417 and DG418 offer SPST configurations with opposite control logics, the DG419 specifically provides an SPDT arrangement. All variants share the same high-voltage silicon gate process and low-power characteristics, differing primarily in internal switch topology.

Replacement Considerations

DG419DY-T1-E3: Same SPDT functionality in the identical 8-lead narrow SOIC package, available in tape-and-reel format instead of tubes.

FAQ

What is the guaranteed switching behavior for the DG419?

The DG419 guarantees break-before-make switching action, preventing simultaneous connection of both common terminals during state transitions.

How does the DG419 handle input signals exceeding the supply rails?

Signals on the Source (S) or Drain (D) pins exceeding V+ or V- are clamped by internal diodes. The forward diode current must be limited to the maximum ratings specified in the datasheet.

Is the DG419 suitable for single-supply operation?

Yes, the DG419 supports single-supply operation with a minimum voltage of 5 V and a maximum of 40 V, though specifications may vary compared to dual-supply conditions.