DGSK28-025CS

Diode Arrays Overview

The DGSK28-025CS is a second-generation Gallium Arsenide Schottky rectifier featuring enhanced barrier height technology. It provides a maximum repetitive reverse voltage (VRRM) of 250 V and a DC forward current (IDC) of 21 A at 25°C case temperature. The device incorporates a common cathode dual diode topology within a surface-mount TO-263 AB package. Key electrical characteristics include a typical forward voltage drop of 1.7 V at 7.5 A, a junction capacitance of 15 pF, and a peak reverse recovery current of 2.7 A.

Diode Arrays Feature Summary

• Utilizes GaAs Schottky technology with enhanced barrier height for low operating forward voltage drop
• Features high switching speed and short reverse recovery current peak due to minority carrier lifetime control
• Maintains low junction capacity independent of temperature variations
• Provides soft turn-off characteristics to minimize electromagnetic interference

Diode Arrays Applications

• AC-DC converters in switched mode power supplies
• High frequency DC-DC converters requiring high efficiency
• Telecommunications equipment power systems
• Automotive electronic equipment

Diode Arrays Procurement Notes

Verify the specific suffix 'CS' against manufacturer documentation to confirm compliance with RoHS directives and halogen-free status. Ensure thermal management design accounts for the specified junction-to-case thermal resistance. Confirm that the TO-263 AB footprint matches the target PCB layout dimensions provided in the official datasheet outlines.

Diode Arrays Selection Notes

Select this component for applications demanding low reverse recovery charge and minimal junction capacitance. The GaAs material offers superior high-frequency performance compared to standard silicon alternatives. Evaluate the 21 A continuous current rating against actual thermal dissipation requirements to ensure operation remains within the -55°C to +175°C junction temperature range.

Diode Arrays Part Context

This part belongs to the DGS/DGSK series of Gallium Arsenide Schottky rectifiers manufactured by IXYS. The series utilizes second-generation enhancement barrier technology to optimize switching speed and conduction losses. The DGSK variant specifically denotes a dual common cathode configuration suitable for bridge or synchronous rectification topologies.

Diode Arrays Replacement Considerations

Direct replacements must match the 250 V rating, 21 A current capacity, and TO-263 AB package. Verify that alternative GaAs Schottky devices maintain comparable junction capacitance and reverse recovery characteristics to preserve circuit efficiency.