DMF2821-000

RF Diode Overview

The DMF2821-000 is a silicon beam-lead Schottky mixer diode from the Skyworks DMF series, designed for X-band applications. It operates within a frequency range of 8.2 to 12.4 GHz and features a low drive level configuration. Key electrical specifications include a junction capacitance (CJ) ranging from 0.15 to 0.30 pF at 0 V and 1 MHz, and a series resistance (RS) of 8 Ω measured at 5 mA. The device has a maximum continuous wave power dissipation of 75 mW per junction and supports an operating temperature range from -65°C to +175°C.

RF Diode Feature Summary

• Utilizes a beam-lead design to minimize parasitic effects and facilitate bonding to small junction areas characteristic of low capacitance microwave devices.
• Manufactured using statistical process control wafer fabrication to ensure tight impedance control through narrow spreads in capacitance values and low series resistance.
• Constructed with epitaxial silicon substrates and barrier metal deposition to form the Schottky junction, ensuring robust performance in balanced mixer topologies.

RF Diode Applications

• Microwave Integrated Circuits (MICs)
• X-Band Mixers
• Detectors

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Skyworks Solutions documentation. Ensure handling procedures strictly adhere to electrostatic discharge (ESD) precautions, as exposure to high static potentials can permanently damage the sensitive beam-lead structure during installation.

RF Diode Selection Notes

Select this specific part when designing for the X-band frequency range requiring a low local oscillator drive level. Compare the specified junction capacitance and series resistance against circuit requirements to ensure proper impedance matching. Confirm that the thermal management strategy accommodates the 75 mW power dissipation limit across the full industrial temperature range.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The series covers S, C, X, Ku, K, and Ka bands, offering single, pair, common cathode, anti-parallel, ring quad, and bridge quad configurations. The DMF designation specifically indicates an N-type low drive device optimized for lower local oscillator power consumption.

RF Diode Replacement Considerations

Within the same series, the DME2957-000 serves as a medium drive alternative for X-band applications, while the DMJ2777-000 provides a high drive option. These substitutes share identical package outlines but differ in forward voltage characteristics and drive level requirements.