DMF2848-000

RF Diode Overview

The DMF2848-000 is a beam-lead silicon Schottky barrier mixer diode from Skyworks Solutions, categorized as an N-type low drive device. It operates in the K and Ka frequency bands (18.0 to 40.0 GHz). The component features a bridge quad configuration with four junctions per package. Electrical specifications include a maximum capacitance of 0.1 pF at 0 V and 1 MHz, a series resistance of 18 Ω at 5 mA, and a breakdown voltage of 2 V at 10 μA. The forward voltage ranges from 270 to 350 mV at 1 mA. Absolute maximum ratings specify a continuous wave power dissipation of 75 mW per junction and a maximum current of 100 mA.

RF Diode Feature Summary

• Beam-lead design reduces bonding challenges associated with small low-capacitance junction areas.
• Utilizes epitaxial silicon substrate deposition for low series resistance and narrow capacitance spread.
• Suitable for balanced mixer applications due to low parasitics and uniformity.

RF Diode Applications

• Microwave Integrated Circuits
• Mixers
• Detectors

RF Diode Procurement Notes

Verify the specific datasheet revision and date code upon ordering. Confirm that the beam-lead package requires specialized handling and bonding equipment compatible with the specified outline drawing. Ensure electrostatic discharge precautions are strictly followed during storage and assembly to prevent damage to the sensitive semiconductor junctions.

RF Diode Selection Notes

Select this part for high-frequency designs requiring low local oscillator drive levels within the K or Ka bands. Compare the 0.1 pF maximum capacitance and 18 Ω series resistance against circuit impedance requirements. Evaluate the 270 to 350 mV forward voltage range to ensure compatibility with available biasing networks and signal levels.

RF Diode Part Context

This component belongs to the DME, DMF, and DMJ series of silicon beam-lead Schottky mixer diodes. The DMF prefix specifically denotes an N-type device optimized for low drive applications. The series covers S, C, X, Ku, K, and Ka bands, offering various configurations including singles, pairs, common cathodes, anti-parallel pairs, ring quads, and bridge quads.

RF Diode Replacement Considerations

Other devices in the same series may serve as substitutes if electrical parameters align. Potential alternatives include the DME2851-000 for medium drive or the DMJ2852-000 for high drive applications within the K and Ka bands. Verify that the replacement maintains the required bridge quad configuration and beam-lead package dimensions.