FDFMA2P853T

Single FETs, MOSFETs Overview

The FDFMA2P853T is an integrated P-Channel PowerTrench MOSFET and Schottky diode in a MicroFET 2x2 Thin package. It features a maximum drain-source voltage of -20 V and continuous drain current of -3.0 A at 25 °C. The on-resistance is 120 mΩ at VGS = -4.5 V and 160 mΩ at VGS = -2.5 V. The device includes a Schottky diode with a forward voltage below 0.46 V at 500 mA. Operating temperature ranges from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Integrated single-package solution combining a low on-state resistance P-Channel MOSFET with an independently connected low forward voltage Schottky diode for minimum conduction losses.
• MicroFET 2x2 Thin package provides exceptional thermal performance relative to physical size, suitable for linear mode applications.
• RoHS compliant and free from halogenated compounds and antimony oxides.

Single FETs, MOSFETs Applications

• Battery charge switch in cellular handsets
• Ultra-portable electronic applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entities due to corporate acquisitions. Confirm RoHS compliance status and material composition details against current regulatory requirements. Ensure the component matches the specific MicroFET 2x2 Thin package dimensions and pinout configuration required by the design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact dual-function power switch and freewheeling path. Evaluate thermal resistance values based on specific PCB copper pad sizes, as junction-to-ambient resistance varies significantly with mounting area. Consider the gate threshold voltage characteristics for logic level compatibility.

Single FETs, MOSFETs Part Context

This part belongs to the PowerTrench MOSFET family, characterized by low on-resistance technology. It utilizes the MicroFET package series designed for high-density surface mount applications. The integration of the Schottky diode reduces the overall footprint compared to discrete solutions.

Single FETs, MOSFETs Replacement Considerations

Check for equivalent integrated MOSFET-Schottky combinations in the same package. Verify electrical parameters such as breakdown voltage, on-resistance, and thermal resistance match the original specifications before substitution.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is -3.0 A at an ambient temperature of 25 °C.

How does the package affect thermal performance?

The MicroFET 2x2 Thin package offers high thermal efficiency for its size, with junction-to-ambient thermal resistance ranging from 86 °C/W to 173 °C/W depending on the copper pad area used.