Diode Arrays FEPF16BT-E3/45 product image

FEPF16BT-E3/45

  • Description:DIODE ARRAY GP 100V 8A ITO220AB
  • Series:-

SKU:61355cc4fca6 Category: Brand:

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FEPF16BT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 100V 8A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FEPF16BT-E3/45

  • Description:DIODE ARRAY GP 100V 8A ITO220AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):8A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for FEPF16BT-E3/45

FEPF16BT-E3/45

Diode Arrays Overview

The FEPF16BT-E3/45 is a dual common cathode silicon rectifier from Vishay, housed in a TO-220AB package. It features a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 16 A per diode. The device exhibits a maximum forward voltage drop of 950 mV and a peak reverse recovery time of 35 ns. It supports a non-repetitive peak forward surge current of 200 A and operates within a junction temperature range of -55°C to +150°C.

Diode Arrays Feature Summary

  • Dual common cathode configuration for efficient bridge or full-wave rectification applications
  • Fast switching characteristics with low reverse recovery time suitable for high-frequency circuits
  • Robust thermal management via the TO-220AB through-hole mounting style

Diode Arrays Applications

  • High-frequency power supply rectification
  • DC-DC converter output stages
  • Free-wheeling diodes in inductive load circuits

Diode Arrays Procurement Notes

Verify the specific suffix against official Vishay documentation to confirm compliance with RoHS3 standards and lead-free manufacturing processes. Confirm that the TO-220AB physical dimensions match the target PCB footprint requirements before finalizing procurement decisions.

Diode Arrays Selection Notes

Select this component when a 100 V rating and 16 A continuous current capacity are required in a dual common cathode arrangement. The 35 ns reverse recovery time makes it appropriate for faster switching applications compared to standard recovery diodes, provided the thermal design accommodates the 950 mV forward voltage drop at rated current.

Diode Arrays Part Context

This part belongs to the FEP16xT series of fast recovery rectifiers manufactured by Vishay General Semiconductor. These devices utilize advanced silicon planar technology to achieve reliable performance in demanding power electronics environments while maintaining compact form factors.

Diode Arrays Replacement Considerations

Officially documented similar substitutes include the FEP16AT-E3/45 (50 V), FEP16CT-E3/45 (150 V), and FEP16GT-E3/45 (400 V). Ensure the replacement matches the 100 V rating and 16 A current specifications.

FEPF16BT-E3/45FEPF16BT-E3/45

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