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FEPF16DT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 200V 8A ITO220AB. Review the specifications below when checking this part for your BOM.
The FEPF16DT-E3/45 is a Vishay General Semiconductor through-hole silicon junction diode configured as a common cathode dual unit in a TO-220F package. It features a maximum repetitive peak reverse voltage of 400 V and a continuous forward current rating of 16 A. The device exhibits a maximum forward voltage drop of 950 mV and a peak reverse recovery time of 50 ns. It supports a peak non-repetitive forward surge current of 125 A and operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against official Vishay documentation to confirm pinout compatibility and electrical tolerances. Confirm RoHS3 compliance status directly from the manufacturer datasheet before integration. Ensure the TO-220F package dimensions match the target PCB footprint requirements precisely.
Select this component when high-speed switching and moderate voltage blocking are required in a through-hole assembly. The 16 A current rating suits medium-power applications, while the low reverse recovery time minimizes switching losses. Evaluate thermal management needs based on the specified junction temperature limits.
This part belongs to the FEP16xT series of fast recovery rectifiers manufactured by Vishay. It utilizes silicon junction technology designed for robust performance in demanding electronic environments. The component serves as a specialized solution for applications requiring rapid charge carrier extraction and reliable high-current handling capabilities.
V30D45C-M3/I
The maximum operating junction temperature is +150°C.
No, it is designed specifically for through-hole mounting in a TO-220F package.
The peak non-repetitive forward surge current (Ifsm) is rated at 125 A.
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