FFAF10U40DNTU

Diode Arrays Overview

The FFAF10U40DNTU is an ultrafast recovery power rectifier manufactured by onsemi, originally developed by Fairchild Semiconductor. It features a dual common cathode configuration housed in a TO-3PF package. The device supports a peak repetitive reverse voltage of 400 V and an average forward current of 10 A at a case temperature of 100°C. Key electrical characteristics include a maximum instantaneous forward voltage of 1.4 V at 10 A, a non-repetitive peak surge current of 100 A, and a maximum reverse recovery time of 50 ns. The component operates within a junction temperature range of -65°C to +150°C.

Diode Arrays Feature Summary

• Ultrafast recovery with soft recovery characteristics for reduced switching noise
• Low forward voltage drop to minimize conduction losses
• High avalanche energy capability for robust operation under transient conditions

Diode Arrays Applications

• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switching mode power supplies

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm pinout compatibility and packaging details. Confirm RoHS compliance status through the manufacturer's latest product data sheets. Ensure that the procurement channel provides traceable documentation regarding the component's origin and manufacturing history.

Diode Arrays Selection Notes

Select this component for applications requiring fast switching speeds and low reverse recovery charge. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the maximum operating temperature limits when designing heat dissipation strategies for high-current scenarios.

Diode Arrays Part Context

This component belongs to the FFAF series of ultrafast recovery rectifiers. It was originally produced by Fairchild Semiconductor before being acquired by onsemi. The datasheet revision indicates final production specifications, though availability may vary due to lifecycle changes.

Diode Arrays Replacement Considerations

Check for direct equivalents such as the FFAF10U40DN from Fairchild or onsemi. Verify pinout alignment and electrical parameter matching before substitution.

Diode Arrays FAQ

What is the maximum reverse recovery time for this device?

The maximum reverse recovery time is 50 ns under test conditions of IF = 10A and di/dt = 200A/µs.

Does the device support avalanche operation?

Yes, the datasheet specifies an avalanche energy rating of 1.0 mJ.

What is the typical junction capacitance?

The typical junction capacitance is 450 pF at 0V reverse bias.