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FFPF04U40DNTU is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARR AVAL 400V 4A TO220F-3. Review the specifications below when checking this part for your BOM.
The FFPF04U40DNTU is an ultrafast recovery power rectifier manufactured by onsemi, housed in a TO-220F package. It features a dual common cathode configuration with a peak repetitive reverse voltage of 400 V and an average rectified forward current of 4 A at 100°C. The device exhibits a maximum instantaneous forward voltage of 1.4 V at 4 A and 25°C, alongside a maximum reverse current of 10 µA. Key electrical parameters include a reverse recovery time of 45 ns, a non-repetitive peak surge current rating of 40 A, and a junction-to-case thermal resistance of 10 °C/W.
Verify the component status carefully as this part number may be discontinued or obsolete depending on the specific manufacturing lot and date code. Confirm that the TO-220F package dimensions match your PCB footprint requirements. Ensure that the thermal management design accounts for the specified junction-to-case thermal resistance under expected operating loads.
Select this component when designing circuits requiring fast switching speeds and low conduction losses. The dual common cathode arrangement allows for use in bridge configurations or push-pull topologies without requiring multiple discrete components. Consider the 400 V blocking voltage and 4 A current rating to ensure adequate headroom for the specific application's peak demands.
This device belongs to the FFPF series of ultrafast recovery rectifiers originally developed by Fairchild Semiconductor, which was later acquired by onsemi. The 'DN' suffix indicates the specific pinout and packaging style within the product line. These components are designed to replace slower standard recovery diodes in high-frequency applications where reduced reverse recovery charge is critical for system performance.
FFPF04U40S TU
The maximum reverse recovery time (trr) is specified as 45 ns under test conditions of IF = 4A and di/dt = 200A/µs.
Yes, the datasheet specifies an Avalanche Energy (EAVL) rating of 1.0 mJ, indicating it can withstand limited avalanche energy events.
The maximum instantaneous forward voltage decreases as temperature increases; it is rated at 1.4 V at 25°C and 1.3 V at 100°C when conducting 4 A.
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