FFSH10120ADN_F155

Description：DIODE ARR SIC 1200V 10A TO247-3
Series：-

SKU:3b9cb3e01a4c Category: Diode Arrays Brand: onsemi

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Product introduction

FFSH10120ADN_F155 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARR SIC 1200V 10A TO247-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FFSH10120ADN_F155

Description：DIODE ARR SIC 1200V 10A TO247-3
Series：-
Mfr：onsemi
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：10A (DC)
Voltage - Forward (Vf) (Max) @ If：-
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：-
Operating Temperature - Junction：175°C (Max)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for FFSH10120ADN_F155

FFSH10120ADN_F155

Diode Arrays Overview

The FFSH10120ADN-F155 is a silicon carbide Schottky diode manufactured by onsemi, housed in a TO-247-3 through-hole package. It features a dual anode common cathode configuration with a maximum repetitive reverse voltage of 1200 V and a forward current rating of 10 A. The device exhibits a typical forward voltage of 1.45 V at 10 A and supports a forward surge current of 42 A. Operating temperatures range from -55°C to +175°C, with a power dissipation capacity of 83 W.

Diode Arrays Feature Summary

Utilizes silicon carbide (SiC) technology for high-efficiency rectification
Features a dual anode common cathode configuration within a single package
Designed for high-temperature operation up to 175°C junction temperature

Diode Arrays Applications

High-frequency switching power supplies
Uninterruptible power supply (UPS) systems
DC-DC converter circuits

Diode Arrays Procurement Notes

Verify the specific suffix F155 against the manufacturer's latest datasheet to confirm pinout and thermal characteristics. Confirm RoHS compliance status as required by project specifications. Check for end-of-life notifications or obsolescence warnings prior to final design approval. Ensure the TO-247-3 footprint matches the target PCB layout constraints.

Diode Arrays Selection Notes

Select this component when a 1200 V SiC Schottky diode with a 10 A continuous current rating is required. The dual anode common cathode arrangement allows for efficient bridge or synchronous rectifier topologies in a compact form factor. Consider the low forward voltage drop for improved efficiency in high-power applications.

Diode Arrays Part Context

This part belongs to onsemi's FFSH series of silicon carbide Schottky diodes. The series is designed for high-voltage, high-temperature environments where traditional silicon diodes may underperform. The TO-247-3 package provides robust mechanical stability and thermal management capabilities suitable for industrial and automotive power electronics.