FFSH15120ADN-F155

Diode Arrays Overview

The FFSH15120ADN-F155 is a Silicon Carbide (SiC) Schottky Barrier Diode manufactured by onsemi. It features a dual anode common cathode configuration housed in a TO-247-3 through-hole package. The device supports a maximum repetitive reverse voltage of 1.2 kV and conducts a forward current of 15 A. Key electrical parameters include a forward voltage of 1.45 V, a forward surge current of 80 A, and a reverse leakage current of 200 uA at 1200 V. It operates within a temperature range of -55°C to +175°C with a power dissipation rating of 110 W.

Diode Arrays Feature Summary

• Utilizes silicon carbide technology for high-temperature stability and low switching losses
• Features a dual anode common cathode configuration for bridge rectifier applications
• Designed for robust performance under high thermal stress conditions

Diode Arrays Applications

• Solar microinverters
• Uninterruptible Power Supplies (UPS)
• DC fast charging systems

Diode Arrays Procurement Notes

Verify the specific suffix F155 against the manufacturer datasheet to confirm packaging details and compliance status. Ensure the TO-247-3 lead form matches the target PCB footprint. Cross-reference the RoHS and REACH declarations with the latest official documentation before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high blocking voltage and efficient rectification in harsh environments. The dual anode arrangement simplifies layout for full-bridge topologies. Consider the thermal resistance of the TO-247-3 package and ensure adequate heatsinking to maintain junction temperatures within the specified operational limits during continuous conduction.

Diode Arrays Part Context

This diode belongs to the EliteSiC series from onsemi, targeting high-efficiency power conversion. It complements other SiC devices in renewable energy and industrial power supply architectures. The product line emphasizes reliability and reduced system size through higher operating frequencies enabled by superior semiconductor material properties.

Diode Arrays Replacement Considerations

FFSH20120ADN-F155

Diode Arrays FAQ

What is the maximum junction temperature for this device?

The maximum operating junction temperature is +175°C.

Does this component support through-hole mounting?

Yes, it is available in a TO-247-3 package designed for through-hole installation.

What is the forward voltage drop at rated current?

The forward voltage is specified as 1.45 V at the rated forward current.