FJP1943OTU

Single Bipolar Transistors Overview

The FJP1943OTU is a PNP silicon power transistor manufactured by onsemi, designed for high-voltage switching applications. It features a collector-emitter voltage (VCEO) of 250 V and a collector-base voltage (VCBO) of 230 V. The device supports a continuous collector current of 17 A and a maximum DC collector current of 15 A. With a power dissipation rating of 80 W and a transition frequency (fT) of 30 MHz, it operates within a temperature range of -55 °C to +150 °C. The component utilizes a TO-220-3 through-hole package and provides a minimum DC current gain (hFE) of 80 at 1 A and 5 V.

Single Bipolar Transistors Feature Summary

• High voltage capability with 250 V collector-emitter breakdown
• Robust current handling with 17 A continuous collector current
• High power dissipation rated at 80 W for thermal stability
• Wide operating temperature range extending to +150 °C

Single Bipolar Transistors Applications

• High-voltage audio amplifier output stages
• Switching power supply circuits
• Motor control driver interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturing lot and date code upon receipt, as this component may be subject to obsolescence or limited availability from primary sources. Confirm that the received units match the exact FJP1943OTU designation to ensure compatibility with existing circuit designs. Check for any updated datasheet revisions that might affect electrical characteristics or pin configurations before final integration into production systems.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high voltage PNP switching with significant current capacity. Ensure the thermal management solution can handle the 80 W dissipation rating under worst-case operating conditions. Verify that the drive circuitry can provide sufficient base current to achieve the specified hFE and saturation levels. Consider the TO-220-3 package constraints for PCB layout and mounting requirements in the final assembly.

Single Bipolar Transistors Part Context

This part belongs to the FJP1943 series of high-voltage bipolar junction transistors. It serves as a complementary counterpart to NPN devices in push-pull amplifier configurations. The series is engineered for robust performance in demanding analog and switching environments. The TO-220-3 package facilitates efficient heat transfer to external heatsinks, supporting high-power operations in compact form factors.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the FJA4213OTU, which shares similar electrical ratings and package type. Verify pinout compatibility and thermal resistance values when cross-referencing alternative manufacturers' components. Ensure that any replacement maintains the required 250 V breakdown voltage and 17 A current handling capabilities for safe operation.