FQB8N25TM

Single FETs, MOSFETs Overview

The FQB8N25TM is a 250V N-Channel enhancement mode power MOSFET manufactured by onsemi. It utilizes planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. The device features an 8.0A continuous drain current rating at 25°C case temperature, with a maximum static drain-source on-resistance of 0.55Ω at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C and includes 100% avalanche testing for reliability.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance.
• Capable of withstanding high energy pulses in both avalanche and commutation modes.
• Features low gate charge and low reverse transfer capacitance (Crss) to reduce switching losses.
• Includes improved dv/dt capability and has undergone 100% avalanche testing.

Single FETs, MOSFETs Applications

• High efficiency switching DC/DC converters
• Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TM' against official manufacturer documentation to confirm package type and availability status. Confirm that the component is sourced from authorized distributors to ensure authenticity. Check for any lifecycle notices regarding obsolescence or last-time buy notifications. Ensure thermal management requirements align with the specified junction-to-case thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust 250V blocking capability with moderate current handling up to 8.0A. Consider the low gate charge characteristics for driving efficiency in switch-mode power supply designs. Evaluate the thermal resistance parameters to determine appropriate heatsinking solutions for the intended operating environment and duty cycle.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of power MOSFETs produced by Fairchild Semiconductor, now part of onsemi. The FQB8N25 specifically denotes the D2PAK surface-mount package variant, while the FQI8N25 corresponds to the I2PAK package. Both share identical electrical specifications but differ in physical footprint and mounting style.

Single FETs, MOSFETs Replacement Considerations

The FQI8N25 serves as a direct pin-compatible alternative with identical electrical characteristics, differing only in the I2PAK package form factor compared to the D2PAK of the FQB8N25.