FQD2N90TM

Single FETs, MOSFETs Overview

The FQD2N90TM is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes QFET technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device features a drain-source breakdown voltage of 900 V and a continuous drain current rating of 2.4 A at 25°C. Its maximum on-resistance is specified as 7.5 Ohms at a gate-source voltage of 10 V. The component operates within a junction temperature range of -55°C to +150°C, with a power dissipation capacity of 1.8 W.

Single FETs, MOSFETs Feature Summary

• High-voltage capability suitable for demanding switching applications
• Enhanced performance through proprietary QFET technology
• Surface-mount design optimized for automated assembly

Single FETs, MOSFETs Applications

• High-voltage DC-to-DC converter circuits
• Power factor correction stages
• General-purpose high-voltage switching

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision when sourcing this component to ensure alignment with electrical characteristics. Confirm that the D2PAK-3 package dimensions match your PCB footprint requirements. Ensure that thermal management strategies account for the 1.8 W power dissipation limit under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this part for designs requiring robust 900 V blocking capability in a compact surface-mount form factor. The relatively high on-resistance makes it suitable for lower-current applications where voltage stress is the primary constraint. Evaluate thermal resistance parameters to ensure adequate heat sinking for sustained operation.

Single FETs, MOSFETs Part Context

This component belongs to the FQD series of high-voltage N-channel MOSFETs from onsemi. These devices are engineered for general-purpose power switching applications where high voltage isolation is required. The series offers various current ratings while maintaining a consistent 900 V breakdown voltage profile across different package options.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the FQB2N90TM and FQC2N90TM, which share identical pinouts and similar electrical specifications. Verify that any replacement maintains the same D2PAK-3 package and meets the 900 V / 2.4 A operational requirements.