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FQD7N20TM is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 200V 5.3A DPAK. Review the specifications below when checking this part for your BOM.
The FQD7N20TM is a single N-Channel enhancement mode power MOSFET manufactured by onsemi. It utilizes QFET technology and is housed in a DPAK-3 (TO-252-3) surface-mount package. The device features a drain-source breakdown voltage of 200 V and supports a continuous drain current of 5.5 A at case temperature. Key electrical parameters include a maximum on-resistance of 750 mOhms, a gate charge of 9 nC, and a threshold voltage of 1 V. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'TM' against the official datasheet to confirm packaging details such as tape and reel specifications. Confirm component status as the part may be subject to obsolescence or lifecycle changes. Ensure compatibility with RoHS and REACH regulations required for the target assembly process before finalizing procurement plans.
Select this component when a 200V N-Channel MOSFET with moderate current handling is required in a compact SMD footprint. The logic-level gate drive capability allows for direct interfacing with standard control logic. Consider thermal management requirements due to the specified power dissipation limits in the TO-252AA package.
This component belongs to the FQD7N20L series from onsemi, designed for general-purpose power switching. It shares architectural similarities with other QFET devices but offers specific electrical optimizations for its voltage and current class. The DPAK package provides a balance between thermal performance and board space efficiency.
Direct substitutes include the FQD7N20LTM variant. Verify pinout compatibility and ensure that the replacement meets the same 200V and 5.5A ratings. Cross-reference with FQU7N20L if through-hole mounting is acceptable instead of surface mount.
The absolute maximum gate-source voltage is ±30 V.
Yes, the device is 100% avalanche tested to ensure reliability under high energy pulse conditions.
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