Single FETs, MOSFETs FQD8N25TF product image

FQD8N25TF

$0.51
  • Description:MOSFET N-CH 250V 6.2A DPAK
  • Series:QFET®
  • Mfr:Fairchild Semiconductor
  • Package:Bulk

SKU:803bdbfaf778 Category: Brand:

  
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FQD8N25TF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 250V 6.2A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQD8N25TF

  • Description:MOSFET N-CH 250V 6.2A DPAK
  • Series:QFET®
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):250 V
  • Current - Continuous Drain (Id) @ 25°C:6.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:550mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 50W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for FQD8N25TF

FQD8N25TF

Single FETs, MOSFETs Overview

The FQD8N25TF is an N-channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It features a drain-source voltage (Vds) rating of 250 V and a continuous drain current (Id) of 6.2 A at case temperature. The device utilizes planar stripe DMOS technology for low on-resistance, specified as 0.55 Ω typical. It is housed in a surface-mount DPAK (TO-252) package with three terminals. The component supports a maximum power dissipation of 2.5 W at ambient temperature and 25 W at case temperature, operating within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary planar stripe DMOS technology for enhanced performance
  • Designed for high-voltage switching applications with robust avalanche capability
  • Surface-mount construction optimized for automated assembly processes

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TF' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure the source document explicitly lists FQD8N25TF rather than the generic FQD8N25, as package variations may exist. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 250 V breakdown voltage and approximately 6 A current handling are required in a compact surface-mount form factor. The DPAK package offers a balance between thermal performance and board space efficiency. Consider the 0.55 Ω on-resistance for conduction loss calculations in low-to-medium power conversion designs where standard TO-220 packages are too large.

Single FETs, MOSFETs Part Context

This part belongs to Fairchild's discrete power MOSFET portfolio, leveraging planar DMOS technology for improved ruggedness. The FQD series typically targets general-purpose power switching needs. The FQD8N25TF variant specifically adapts the standard FQD8N25 die into a surface-mountable DPAK configuration, facilitating integration into modern PCB layouts requiring reduced profile and automated placement compatibility.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the FQD8N25 without the reel suffix if loose components are acceptable. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers' 250 V, 6 A DPAK MOSFETs to ensure equivalent electrical and mechanical performance.

FQD8N25TFFQD8N25TF
$0.51
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