FQI32N12V2TU

Single FETs, MOSFETs Overview

The FQI32N12V2TU is an N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes proprietary planar stripe DMOS technology to achieve low on-resistance and fast switching performance. The device features a drain-to-source voltage (Vdss) of 120 V and a continuous drain current (Id) of 32 A at case temperature. Its typical on-resistance (Rds(on)) is 0.05 ohms. The component is housed in a lead-free I2PAK-3 package, suitable for high-power applications requiring efficient thermal management and robust electrical characteristics.

Single FETs, MOSFETs Feature Summary

• Constructed using proprietary planar stripe DMOS technology for enhanced performance
• Designed as an N-Channel enhancement mode power field-effect transistor
• Features low on-resistance for improved efficiency in power switching applications

Single FETs, MOSFETs Applications

• Power switching circuits
• Pulse width modulation (PWM) control systems
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation, as Fairchild Semiconductor's discrete power division was acquired by ON Semiconductor. Ensure the ordering suffix matches the specific package variant required. Confirm RoHS compliance status through official documentation. Cross-reference the part number with current distributor catalogs to ensure availability and authenticity from authorized sources before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 120 V rating and 32 A continuous current capacity are required. The 0.05 ohm on-resistance makes it suitable for applications prioritizing conduction loss reduction. Consider the I2PAK-3 package for its thermal dissipation capabilities relative to the expected power load. Ensure the gate drive requirements align with the MOSFET's threshold voltage specifications for reliable switching operation.

Single FETs, MOSFETs Part Context

This component belongs to the family of N-Channel power MOSFETs produced using planar stripe DMOS technology. It is functionally similar to other devices in the series, such as the FQP32N12V2, sharing core electrical characteristics. The 'I' in the part number typically denotes the specific package style, distinguishing it from other variants within the same electrical specification group.

Single FETs, MOSFETs Replacement Considerations

The FQP32N12V2TU is a documented equivalent within the same product family. Verify pinout compatibility and thermal resistance values when substituting. Ensure the replacement part meets the same voltage and current ratings. Check for any differences in packaging or lead finish if mechanical constraints exist.