FQI5N80TU

Single FETs, MOSFETs Overview

The FQI5N80TU is an N-Channel enhancement mode power MOSFET manufactured by onsemi, utilizing planar stripe DMOS technology. It features a drain-source voltage of 800 V and a continuous drain current of 4.8 A at 25°C case temperature. The device exhibits a maximum static drain-source on-resistance of 2.6 Ω at VGS = 10 V. Key electrical parameters include a typical total gate charge of 25 nC and a reverse transfer capacitance of 11 pF. It operates within a junction temperature range of -55°C to +150°C and is housed in an I2PAK (TO-263) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
• Capable of withstanding high energy pulses in avalanche and commutation modes, verified through 100% avalanche testing.
• Designed for improved dv/dt capability to enhance reliability during fast switching operations.

Single FETs, MOSFETs Applications

• High efficiency switch mode power supplies
• Unclamped inductive switching applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix corresponds to the I2PAK surface-mount package variant rather than the D2PAK version. Ensure documentation references the correct revision history associated with the original Fairchild datasheet specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high-voltage blocking capabilities combined with moderate current handling. The low gate charge facilitates efficient driver design for high-frequency operation. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance to ensure safe operating area compliance under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of power transistors, which are engineered for robust performance in demanding power electronics environments. The FQI5N80TU specifically addresses the need for reliable high-voltage switching in compact surface-mount form factors, serving as a critical active element in power conversion topologies.

Single FETs, MOSFETs Replacement Considerations

The FQB5N80TU serves as the pin-compatible alternative within the same series, distinguished primarily by its D2PAK package configuration instead of the I2PAK format used by the FQI5N80TU.

Single FETs, MOSFETs FAQ

What is the peak diode recovery dv/dt rating for the internal body diode?

The device supports a peak diode recovery dv/dt rating of 4.0 V/ns.

Is the FQI5N80TU rated for repetitive avalanche energy?

Yes, the datasheet specifies a repetitive avalanche energy rating of 14 mJ.