FQNL1N50BBU

Single FETs, MOSFETs Overview

The FQNL1N50B is a 500V N-Channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features an RDS(on) of 9.0Ω at VGS = 10V and a continuous drain current of 0.27A at 25°C. The device offers low gate charge (4.0nC typical) and low Crss (3.0pF typical), enabling fast switching and improved dv/dt capability. Packaged in TO-92L, it supports a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
• Designed to withstand high energy pulses in avalanche and commutation modes.
• Features low gate charge and reverse transfer capacitance for enhanced efficiency.

Single FETs, MOSFETs Applications

• High efficiency switch mode power supplies
• Power factor correction circuits
• Electronic lamp ballasts based on half bridge topologies

Single FETs, MOSFETs Procurement Notes

Verify the component status as Obsolete or Not In Production before procurement planning. Confirm that the original manufacturer Fairchild Semiconductor specifications align with current sourcing requirements. Ensure compliance with RoHS directives if applicable to the specific batch. Review the datasheet revision history for any updates to electrical characteristics or package dimensions prior to final design integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 500V blocking voltage with low current handling capabilities around 0.27A. The TO-92L package suits space-constrained designs where through-hole mounting is preferred. Consider the thermal resistance of 83°C/W when designing heat dissipation strategies for continuous operation. Evaluate the low gate charge benefits for driving efficiency in high-frequency switching environments.

Single FETs, MOSFETs Part Context

This part belongs to the QFET series from Fairchild Semiconductor, representing a line of N-Channel MOSFETs optimized for power electronics. The series emphasizes robust reliability and scalable performance for mission-critical systems. As a legacy product, it reflects earlier generations of planar DMOS technology designed for cost-effective and efficient power switching solutions.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-reference equivalents within the UniFET or similar series from onsemi, which acquired Fairchild's semiconductor business. Verify pinout compatibility and electrical parameter overlaps, particularly RDS(on) and breakdown voltage, when substituting.