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FQP16N25C-F105 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is FQP16N25 - POWER FIELD-EFFECT TR. Review the specifications below when checking this part for your BOM.
The FQP16N25C-F105 is an N-Channel Enhancement Mode Power MOSFET manufactured by onsemi. It utilizes advanced planar stripe and DMOS technology to achieve low on-resistance and high switching performance. The device features a continuous drain current of 16 A at 25°C case temperature, with a maximum drain-source voltage of 250 V. Key electrical characteristics include a typical gate charge of 41 nC and a typical reverse transfer capacitance (Crss) of 68 pF. It is designed for applications such as switch-mode power supplies, active power factor correction, and electronic lamp ballasts.
Verify the exact suffix -F105 against official datasheets to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through manufacturer documentation. Check for obsolescence notices or lifecycle changes directly from onsemi before finalizing procurement plans.
Select this component for designs requiring robust N-Channel MOSFETs with high avalanche ruggedness. Ensure thermal management supports the specified power dissipation limits. Verify that the 250V rating exceeds the circuit's peak voltage requirements. Consider the TO-220 package constraints for mounting and heat sinking in the final assembly.
This part belongs to onsemi's discrete transistor lineup, specifically within the MOSFET category. It represents a standard power switching solution leveraging silicon-based DMOS technology. The product line focuses on balancing conduction losses with switching speeds for general-purpose power electronics applications.
Consult official cross-reference guides for verified substitutes. Ensure replacement parts match the 250V rating, 16A current capacity, and TO-220 package form factor. Verify pinout compatibility and electrical parameters before integration.
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