Single FETs, MOSFETs FQPF9N08 product image

FQPF9N08

$0.23
  • Description:MOSFET N-CH 80V 7A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube

SKU:c3533cf8ee99 Category: Brand:

  
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FQPF9N08 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 80V 7A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQPF9N08

  • Description:MOSFET N-CH 80V 7A TO220F
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:210mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):23W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for FQPF9N08

FQPF9N08

Single FETs, MOSFETs Overview

The FQPF9N08 is an N-channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a drain-source voltage of 80 V and a continuous drain current of 7.0 A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.21 Ω at VGS = 10 V. Key electrical parameters include a typical gate charge of 5.9 nC, a breakdown voltage of 80 V, and a maximum junction temperature rating of 175 °C.

Single FETs, MOSFETs Feature Summary

  • Utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and enhance switching performance.
  • Capable of withstanding high energy pulses in avalanche and commutation modes.
  • Features improved dv/dt capability for robust operation during diode recovery.

Single FETs, MOSFETs Applications

  • Automotive applications
  • High efficiency DC/DC converters
  • DC motor control

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by Fairchild Semiconductor International before its acquisition by onsemi. Confirm that the datasheet revision matches the specific production lot requirements. Ensure compliance with any updated environmental standards or material composition declarations relevant to the manufacturing date.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring efficient switching and high thermal stability. Consider the 175 °C maximum junction temperature rating for high-temperature environments. Evaluate the 0.21 Ω maximum on-resistance against system power loss constraints. Verify that the 80 V drain-source voltage provides adequate headroom for the target circuit design.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series, which utilizes advanced planar stripe DMOS technology. Originally developed by Fairchild Semiconductor International, the product line focuses on optimizing on-state resistance and switching speed for low-voltage power management applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct equivalents within the FQPF series or other 80V N-channel MOSFETs from onsemi. Verify pinout compatibility and thermal resistance specifications when substituting.

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