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FQPF9N08 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 80V 7A TO220F. Review the specifications below when checking this part for your BOM.
The FQPF9N08 is an N-channel enhancement mode power MOSFET manufactured using planar stripe DMOS technology. It features a drain-source voltage of 80 V and a continuous drain current of 7.0 A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.21 Ω at VGS = 10 V. Key electrical parameters include a typical gate charge of 5.9 nC, a breakdown voltage of 80 V, and a maximum junction temperature rating of 175 °C.
Verify the manufacturer origin carefully, as this component was originally produced by Fairchild Semiconductor International before its acquisition by onsemi. Confirm that the datasheet revision matches the specific production lot requirements. Ensure compliance with any updated environmental standards or material composition declarations relevant to the manufacturing date.
Select this component for low-voltage applications requiring efficient switching and high thermal stability. Consider the 175 °C maximum junction temperature rating for high-temperature environments. Evaluate the 0.21 Ω maximum on-resistance against system power loss constraints. Verify that the 80 V drain-source voltage provides adequate headroom for the target circuit design.
This device belongs to the QFET series, which utilizes advanced planar stripe DMOS technology. Originally developed by Fairchild Semiconductor International, the product line focuses on optimizing on-state resistance and switching speed for low-voltage power management applications.
Check for direct equivalents within the FQPF series or other 80V N-channel MOSFETs from onsemi. Verify pinout compatibility and thermal resistance specifications when substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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