FST120100

$49.92

Description：DIODE MOD SCHOTTKY 100V TO-249AB
Series：-

SKU:7578ce01c390 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

FST120100 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTTKY 100V TO-249AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for FST120100

Description：DIODE MOD SCHOTTKY 100V TO-249AB
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：100 V
Current - Average Rectified (Io) (per Diode)：120A (DC)
Voltage - Forward (Vf) (Max) @ If：840 mV @ 120 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：2 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：TO-249AB
Supplier Device Package：TO-249AB
Grade：-
Qualification：-

Diode Arrays datasheet and documents for FST120100

FST120100

Diode Arrays Overview

The GeneSiC Semiconductor FST120100 is a silicon power Schottky diode module designed for high-current applications. It features an average forward current rating of 120 A per package and a repetitive peak reverse voltage of 100 V. The device operates within a junction temperature range of -55 °C to +150 °C. Electrical characteristics include a maximum instantaneous forward voltage of 0.84 V at Tj = 150 °C and a thermal resistance from junction to case of 0.80 °C/W per leg. The component utilizes a TO-249AB isolated package.

Diode Arrays Feature Summary

High surge capability with a peak forward surge current of 1000 A per leg
Electrically isolated base plate construction
Not ESD sensitive design

Diode Arrays Applications

High-frequency switching power supplies
DC-DC converter circuits
Motor drive freewheeling applications

Diode Arrays Procurement Notes

Verify the specific datasheet revision date against the manufacturer's official records before procurement. Confirm that the TO-249AB package dimensions match the required mechanical constraints. Ensure the supplier provides traceability documentation for the silicon material technology used in this discrete semiconductor module.

Diode Arrays Selection Notes

Select this component when a 100 V blocking voltage and 120 A continuous current are required in a thermally efficient package. The low forward voltage drop contributes to reduced conduction losses. Evaluate the 0.80 °C/W thermal resistance to ensure adequate heatsinking for the intended operating environment.

Diode Arrays Part Context

This part belongs to the FST120 series of silicon power Schottky diodes, which covers voltage ratings from 45 V to 100 V. The series shares common physical packaging and thermal characteristics while varying in reverse voltage specifications. GeneSiC Semiconductor manufactures these modules for industrial power electronics.