FST120200

Diode Arrays Overview

The FST120200 is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 200 V and an average forward current of 120 A per package. It features a maximum instantaneous forward voltage of 0.92 V at Tj = 150 °C and a thermal resistance from junction to case of 0.80 °C/W per leg. The device supports a peak forward surge current of 1000 A and operates within a temperature range of -55 °C to 150 °C.

Diode Arrays Feature Summary

• High surge capability with robust transient handling
• Electrically isolated to plate for mounting flexibility
• Not sensitive to electrostatic discharge

Diode Arrays Applications

• High frequency switched mode power supplies
• Industrial rectifier bridges
• DC-DC converters

Diode Arrays Procurement Notes

Verify the specific manufacturer source, as datasheet references indicate third-party hosting rather than direct GeneSiC Semiconductor documentation. Confirm RoHS compliance status and check for obsolescence notices before procurement. Ensure the supplier provides valid traceability for the TO-249AB package configuration.

Diode Arrays Selection Notes

Select this component when a 200 V rating and 120 A continuous current are required in a compact TO-249AB form factor. The low thermal resistance facilitates efficient heat dissipation. Verify that the operating environment remains within the specified -55 °C to 150 °C junction temperature limits.

Diode Arrays Part Context

This module belongs to the FST120 series of silicon power Schottky diodes, which includes variants ranging from 150 V to 200 V. The series shares common mechanical dimensions and electrical characteristics, differing primarily in their voltage blocking capabilities while maintaining consistent current ratings and thermal performance profiles.

Diode Arrays Replacement Considerations

FST120150 serves as a lower voltage variant within the same series.