FW389-TL-2WX

FET, MOSFET Arrays Overview

The FW389-TL-2W is a complementary dual MOSFET in an SOIC-8 package. It integrates one N-channel and one P-channel device. The N-channel unit has a drain-source voltage of 100V, continuous current of 2A, and on-resistance of 165mΩ at VGS=10V. The P-channel unit has a drain-source voltage of -100V, continuous current of -2A, and on-resistance of 230mΩ at VGS=-10V. Both units support 4V drive levels. Input capacitance is 490pF for the N-channel and 1000pF for the P-channel.

FET, MOSFET Arrays Feature Summary

• Complementary dual configuration integrating N-channel and P-channel transistors in a single compact package
• Optimized for low-voltage gate drive applications with specified performance at 4V
• Halogen-free compliance for environmental safety standards

FET, MOSFET Arrays Applications

• Low-side and high-side switching circuits
• DC-DC converter topologies
• Motor driver interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TL-2W to confirm the tape-and-reel packing quantity of 2,500 pieces per reel. Ensure the component meets halogen-free requirements if mandated by your design specifications. Cross-reference the marking code TL and lot number on the SOIC-8 package against the manufacturer's documentation to authenticate the source.

FET, MOSFET Arrays Selection Notes

Select this component when a matched pair of N-channel and P-channel MOSFETs is required for space-constrained designs. The 100V rating suits general-purpose power management tasks. Verify that the 2A continuous current capability aligns with the thermal dissipation limits of the target PCB layout, as the allowable power dissipation is rated at 1.8W per unit under specific mounting conditions.

FET, MOSFET Arrays Part Context

This part belongs to the FW389 series of complementary dual MOSFETs manufactured by onsemi. It utilizes PowerTrench technology to achieve low on-resistance within a standard SOIC-8 footprint. The device is designed to simplify circuit layouts by replacing discrete N and P-channel pairs with a single integrated solution.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the 100V/2A complementary dual specification and SOIC-8 package. Verify pinout compatibility between Drain, Gate, and Source terminals. Check that replacement devices offer comparable RDS(on) values at the intended gate drive voltage to maintain switching efficiency.