G3F60MT06J-TR

Single FETs, MOSFETs Overview

The G3F60MT06J-TR is a single-channel N-channel Silicon Carbide (SiC) MOSFET from the GeneSiG G3F series. It features a TO-263-7 surface-mount package and operates with an enhancement mode channel configuration. The device provides a drain-source breakdown voltage of 650 V and a continuous drain current of 57 A. Its maximum on-resistance is specified at 40 mOhms, supporting efficient power switching in high-voltage applications.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide semiconductor technology for enhanced thermal performance and efficiency.
• Designed for surface-mount installation within a compact TO-263-7 footprint.
• Supports high-temperature operation suitable for demanding power electronics environments.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Power factor correction circuits
• Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix J against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status through the latest datasheet before integration. Ensure the ordering quantity aligns with the reel packaging requirements specified by the supplier. Cross-reference the part number with the current Navitas Semiconductor portfolio to ensure accurate sourcing channels.

Single FETs, MOSFETs Selection Notes

Select this component when a 650V rating and low on-resistance are required for space-constrained designs. The TO-263-7 package offers a balance between thermal dissipation capabilities and board space efficiency. Consider the 57A current capability relative to the specific thermal management strategy employed in the target application circuit design.

Single FETs, MOSFETs Part Context

This component belongs to the G3F series of silicon carbide MOSFETs manufactured by GeneSiC Semiconductor, now part of Navitas Semiconductor. The series focuses on providing robust power switching solutions that leverage the superior material properties of SiC over traditional silicon devices for improved system performance.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent parts within the G3F series or other manufacturers offering comparable 650V SiC MOSFETs in TO-263-7 packages. Verify that any substitute matches the critical parameters of 40 mOhm Rds(on) and 57A Id.