Diode Arrays G40H100CTW product image

G40H100CTW

$1.24
  • Description:DIODE ARR SCHOT 100V 40A TO220AB
  • Series:-

SKU:238269a50a7a Category: Brand:

  
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G40H100CTW is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE ARR SCHOT 100V 40A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for G40H100CTW

  • Description:DIODE ARR SCHOT 100V 40A TO220AB
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):40A
  • Voltage - Forward (Vf) (Max) @ If:790 mV @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for G40H100CTW

G40H100CTW

Diode Arrays Overview

The G40H100CTW is a Trench Schottky Rectifier manufactured by Diodes Incorporated, designed for high-frequency applications. It features a maximum repetitive peak reverse voltage (VRRM) and DC blocking voltage (VDC) of 100 V. The device supports a maximum average rectified forward current (IAV) of 40 A at a case temperature of 120°C. Peak forward surge current (IFSM) reaches 250 A under specified conditions. Operating and storage temperatures range from -55°C to +175°C. Typical thermal resistance values are 1°C/W (junction-to-lead) and 2°C/W (junction-to-case).

Diode Arrays Feature Summary

  • High junction temperature capability up to +175°C.
  • Negligible switching losses due to Trench Schottky technology.
  • Optimized trade-off between leakage current and forward voltage drop.
  • Qualified according to AEC-Q101 Rev_D standards.

Diode Arrays Applications

  • High frequency miniature switch mode adapters
  • On-board DC-DC converters
  • High frequency inverters

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm package type and packing quantity. Confirm RoHS compliance status and lead-free finish requirements with the supplier. Ensure the component meets AEC-Q101 qualification if automotive application is intended. Validate thermal management solutions based on the provided thermal resistance parameters.

Diode Arrays Selection Notes

Select this component for circuits requiring low forward voltage drop and fast switching characteristics. Consider the TO-220AB package for through-hole mounting and adequate heat dissipation. Evaluate the 100 V rating against peak reverse voltages in the target circuit. Assess thermal performance using the derating curves provided in the datasheet for accurate current handling at elevated case temperatures.

Diode Arrays Part Context

This part belongs to the Trench Schottky Rectifier Gen II series from Diodes Incorporated. It utilizes advanced trench technology to improve efficiency compared to standard Schottky diodes. The product line targets power conversion systems where minimizing switching losses and managing heat are critical design constraints.

Diode Arrays Replacement Considerations

Consult official cross-reference lists or manufacturer substitution guides for verified alternatives. Ensure any replacement matches the 100 V reverse voltage, 40 A current rating, and TO-220AB package dimensions.

Diode Arrays FAQ

What is the typical junction capacitance of the G40H100CTW?

The typical junction capacitance is 1360 pF, measured at 1.0 MHz and an applied reverse voltage of 4.0 VDC.

Is the G40H100CTW compliant with environmental directives?

Yes, it is Lead-Free, RoHS Compliant, and Halogen and Antimony Free ('Green' Device).

What is the maximum non-repetitive peak reverse current?

The maximum non-repetitive peak reverse current (IRSM) is 3 A at a pulse width of 2 µs.

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