G65P06T

$0.41

Description：MOSFET P-CH 60V 65A TO-220
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tube

SKU:930b8e09f78c Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G65P06T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET P-CH 60V 65A TO-220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G65P06T

Description：MOSFET P-CH 60V 65A TO-220
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：130W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for G65P06T

G65P06T

Single FETs, MOSFETs Overview

The G65P06T is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a drain-source voltage (VDS) of -60 V and a continuous drain current (ID) of -65 A at VGS = -10V. The maximum on-resistance (RDS(ON)) is less than 18 mΩ under the same conditions. It is housed in a TO-220 package with a junction-to-case thermal resistance of 0.96 °C/W and supports an operating temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for low gate charge and high performance
100% avalanche tested for enhanced reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switches
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and marking code against the manufacturer's official documentation before procurement. Confirm that the TO-220 packaging format matches the required assembly specifications. Ensure the component meets all RoHS compliance requirements mandated by the target application standards. Cross-reference the datasheet revision date to ensure access to the most current electrical parameters and absolute maximum ratings.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a -60 V P-Channel MOSFET with high current handling capabilities up to -65 A. The low RDS(ON) specification makes it suitable for efficient power switching. Consider the TO-220 package for through-hole mounting and adequate thermal dissipation. Evaluate the gate charge characteristics against the driving circuit requirements to optimize switching speed and minimize driver losses.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor P-Channel MOSFET lineup, designed for general-purpose power switching. It complements other devices in the portfolio by offering a balance of voltage rating and current capacity in a standard TO-220 form factor. The product line emphasizes trench technology integration to improve efficiency in various power management circuits.